DOI: 10.1063/1.3682479. Drawing graphene nanoribbons on SiC by ion implantation

Drawing graphene nanoribbons on SiC by ion implantation

10.1063/1.3682479

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- and 6H-SiC. The technique presented is as easy as ion implanting regions where graphene layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC. We find that ion implantation of SiC lowers the TG, allowing selective graphene growth at temperatures below the TG of pristine SiC and above TG of implanted SiC. This results in an approach for patterning device structures ranging from a couple tens of nanometers to microns in size without using conventional lithography and chemical processing.

Bibliography

Tongay, S., Lemaitre, M., Fridmann, J., Hebard, A. F., Gila, B. P., & Appleton, B. R. (2012). Drawing graphene nanoribbons on SiC by ion implantation. Applied Physics Letters, 100(7).

Authors 6

S. Tongay (first)
M. Lemaitre (additional)
J. Fridmann (additional)
A. F. Hebard (additional)
B. P. Gila (additional)
B. R. Appleton (additional)

References 13 Referenced 37

10.1126/science.1102896 / Science (2004)
{'key': '2023061720312027400_c2', 'first-page': '7478', 'volume': '472', 'year': '2011', 'journal-title': 'Nature'} / Nature (2011)
10.1063/1.3268788 / Appl. Phys. Lett. (2009)
10.1103/PhysRevX.2.011002 / Phys. Rev. X (2012)
10.1063/1.3628315 / Appl. Phys. Lett. (2011)
10.1126/science.1171245 / Science (2009)
10.1038/nature07719 / Nature (2009)
10.1021/jp040650f / J. Phys. Chem. (2004)
10.1063/1.2988645 / Appl. Phys. Lett. (2008)
10.1063/1.3334683 / Appl. Phys. Lett. (2010)
10.1016/j.nimb.2011.01.054 / Nucl. Instrum. Methods B (2012)
10.1039/b613962k / Phys. Chem. Chem. Phys. (2007)
10.1088/0953-8984/20/32/323202 / J. Phys.: Condens. Matter (2008)

Dates

Type	When
Created	13 years, 6 months ago (Feb. 13, 2012, 6:46 p.m.)
Deposited	2 years, 2 months ago (June 17, 2023, 4:31 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:58 a.m.)
Issued	13 years, 6 months ago (Feb. 13, 2012)
Published	13 years, 6 months ago (Feb. 13, 2012)
Published Online	13 years, 6 months ago (Feb. 13, 2012)
Published Print	13 years, 6 months ago (Feb. 13, 2012)

Funders 0

None

BibTeX

@article{Tongay_2012, title={Drawing graphene nanoribbons on SiC by ion implantation}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3682479}, DOI={10.1063/1.3682479}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tongay, S. and Lemaitre, M. and Fridmann, J. and Hebard, A. F. and Gila, B. P. and Appleton, B. R.}, year={2012}, month=feb }

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