Abstract
Well resolved, sharp photoluminescence (PL) peaks of Er3+ (4f11) ions at ∼1.54 μm are obtained from Er-doped porous silicon (PS:Er) on which a hydrogen plasma treatment is carried out after electrochemical incorporation of Er3+ions into porous silicon. The full width at half maximum (FWHM) of the 1.538 μm main peak at 20 K is less than 1 nm, which is much smaller than that obtained from PS:Er samples annealed in a H2 or O2 flow (FWHM 7–10 nm), and is comparable to that of Er-doped crystalline silicon. The thermal quenching of the PL intensity is, however, relatively small, the PL intensity decreasing only by a factor of 10 from 20 to 300 K.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:54 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 10, 2024, 10:51 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 10, 2024, 11:10 p.m.) |
Issued | 27 years, 1 month ago (July 15, 1998) |
Published | 27 years, 1 month ago (July 15, 1998) |
Published Print | 27 years, 1 month ago (July 15, 1998) |
@article{Dejima_1998, title={Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon}, volume={84}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.368100}, DOI={10.1063/1.368100}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dejima, Tohru and Saito, Riichiro and Yugo, Shigemi and Isshiki, Hideo and Kimura, Tadamasa}, year={1998}, month=jul, pages={1036–1040} }