DOI: 10.1063/1.3679610. A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory

10.1063/1.3679610

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A Monte Carlo simulator is developed to investigate the low resistance state (LRS) retention of HfOx based resistive switching memory. The simulator tracks the evolution of oxygen ions and oxygen vacancies by choosing the occurrence of the generation/recombination/migration processes based on their corresponding probability at each simulation step. The current through the resulting conductive filament (CF) configuration is then calculated by a trap-assisted-tunneling solver. The simulation results are corroborated with experimental data. The LRS retention is found to be CF size dependent, and its variability is suggested to be intrinsic due to the stochastic nature of the CF dissolution. The tail bits of the failure time distribution become a limiting factor of the device reliability in a large memory array.

Bibliography

Yu, S., Yin Chen, Y., Guan, X., Philip Wong, H.-S., & Kittl, J. A. (2012). A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory. Applied Physics Letters, 100(4).

Authors 5

Shimeng Yu (first)
Yang Yin Chen (additional)
Ximeng Guan (additional)
H.-S. Philip Wong (additional)
Jorge A. Kittl (additional)

References 17 Referenced 56

10.1002/adma.200900375 / Adv. Mater. (2009)
10.1109/JPROC.2010.2070830 / Proc. IEEE (2010)
10.1109/TED.2011.2161088 / IEEE Trans. Electron Devices (2011)
10.1109/LED.2010.2078794 / IEEE Electron Device Lett. (2010)
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{'volume': '2011', 'journal-title': 'Tech. Dig. – Int. Solid-State Circuits Conference', 'first-page': '200', 'key': '2023062318233299600_c6'} / Tech. Dig. – Int. Solid-State Circuits Conference
{'volume-title': 'IEEE International Interconnect Technology Conference (IITC)', 'year': '2011', 'key': '2023062318233299600_c7'} / IEEE International Interconnect Technology Conference (IITC) (2011)
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10.1063/1.3624472 / Appl. Phys. Lett. (2011)
10.1109/LED.2010.2040799 / IEEE Electron Device Lett. (2010)
10.1109/LED.2010.2102002 / IEEE Electron Device Lett. (2011)
10.1063/1.1565180 / Appl. Phys. Lett. (2003)
{'volume': '2011', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '729', 'key': '2023062318233299600_c13'} / Tech. Dig. - Int. Electron Devices Meet.
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10.1063/1.3663968 / Appl. Phys. Lett. (2011)

Dates

Type	When
Created	13 years, 7 months ago (Jan. 24, 2012, 6:43 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 4:39 a.m.)
Indexed	3 weeks, 6 days ago (July 30, 2025, 6:57 a.m.)
Issued	13 years, 7 months ago (Jan. 23, 2012)
Published	13 years, 7 months ago (Jan. 23, 2012)
Published Online	13 years, 7 months ago (Jan. 24, 2012)
Published Print	13 years, 7 months ago (Jan. 23, 2012)

Funders 0

None

BibTeX

@article{Yu_2012, title={A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3679610}, DOI={10.1063/1.3679610}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yu, Shimeng and Yin Chen, Yang and Guan, Ximeng and Philip Wong, H.-S. and Kittl, Jorge A.}, year={2012}, month=jan }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:57:43Z",
    "timestamp": 1753873063564,
    "version": "3.41.2"
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2012,
        1,
        23
      ]
    ]
  },
  "abstract": "<jats:p>A Monte Carlo simulator is developed to investigate the low resistance state (LRS) retention of HfOx based resistive switching memory. The simulator tracks the evolution of oxygen ions and oxygen vacancies by choosing the occurrence of the generation/recombination/migration processes based on their corresponding probability at each simulation step. The current through the resulting conductive filament (CF) configuration is then calculated by a trap-assisted-tunneling solver. The simulation results are corroborated with experimental data. The LRS retention is found to be CF size dependent, and its variability is suggested to be intrinsic due to the stochastic nature of the CF dissolution. The tail bits of the failure time distribution become a limiting factor of the device reliability in a large memory array.</jats:p>",
  "DOI": "10.1063/1.3679610",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2012,
        1,
        24
      ]
    ],
    "date-time": "2012-01-24T23:43:05Z",
    "timestamp": 1327448585000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 56,
  "title": "A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory",
  "prefix": "10.1063",
  "volume": "100",
  "author": [
    {
      "given": "Shimeng",
      "family": "Yu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering and Center for Integrated Systems, Stanford University 1 , Stanford, California 94305, USA"
        },
        {
          "name": "IMEC 2 , Kapeldreef 75, 3001 Leuven, Belgium"
        }
      ]
    },
    {
      "given": "Yang",
      "family": "Yin Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IMEC 2 , Kapeldreef 75, 3001 Leuven, Belgium"
        },
        {
          "name": "Department of Electrical Engineering, Katholieke Universteit 3 , Leuven, Belgium"
        }
      ]
    },
    {
      "given": "Ximeng",
      "family": "Guan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering and Center for Integrated Systems, Stanford University 1 , Stanford, California 94305, USA"
        }
      ]
    },
    {
      "given": "H.-S.",
      "family": "Philip Wong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical Engineering and Center for Integrated Systems, Stanford University 1 , Stanford, California 94305, USA"
        }
      ]
    },
    {
      "given": "Jorge A.",
      "family": "Kittl",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IMEC 2 , Kapeldreef 75, 3001 Leuven, Belgium"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2012,
        1,
        24
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062318233299600_c1",
      "doi-asserted-by": "publisher",
      "first-page": "2632",
      "DOI": "10.1002/adma.200900375",
      "volume": "21",
      "year": "2009",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2023062318233299600_c2",
      "doi-asserted-by": "publisher",
      "first-page": "2237",
      "DOI": "10.1109/JPROC.2010.2070830",
      "volume": "98",
      "year": "2010",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "2023062318233299600_c3",
      "doi-asserted-by": "publisher",
      "first-page": "3246",
      "DOI": "10.1109/TED.2011.2161088",
      "volume": "58",
      "year": "2011",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023062318233299600_c4",
      "doi-asserted-by": "publisher",
      "first-page": "1455",
      "DOI": "10.1109/LED.2010.2078794",
      "volume": "31",
      "year": "2010",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "volume": "2010",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "460",
      "key": "2023062318233299600_c5"
    },
    {
      "volume": "2011",
      "journal-title": "Tech. Dig. \u2013 Int. Solid-State Circuits Conference",
      "first-page": "200",
      "key": "2023062318233299600_c6"
    },
    {
      "volume-title": "IEEE International Interconnect Technology Conference (IITC)",
      "year": "2011",
      "key": "2023062318233299600_c7"
    },
    {
      "volume": "2010",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "456",
      "key": "2023062318233299600_c8"
    },
    {
      "key": "2023062318233299600_c9",
      "doi-asserted-by": "publisher",
      "first-page": "063507",
      "DOI": "10.1063/1.3624472",
      "volume": "99",
      "year": "2011",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062318233299600_c10",
      "doi-asserted-by": "publisher",
      "first-page": "353",
      "DOI": "10.1109/LED.2010.2040799",
      "volume": "31",
      "year": "2010",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023062318233299600_c11",
      "doi-asserted-by": "publisher",
      "first-page": "276",
      "DOI": "10.1109/LED.2010.2102002",
      "volume": "32",
      "year": "2011",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023062318233299600_c12",
      "doi-asserted-by": "publisher",
      "first-page": "2121",
      "DOI": "10.1063/1.1565180",
      "volume": "82",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "volume": "2011",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "729",
      "key": "2023062318233299600_c13"
    },
    {
      "key": "2023062318233299600_c14",
      "doi-asserted-by": "publisher",
      "first-page": "197",
      "DOI": "10.1109/LED.2010.2091489",
      "volume": "32",
      "year": "2011",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "volume": "2011",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "413",
      "key": "2023062318233299600_c15"
    },
    {
      "volume": "2011",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "275",
      "key": "2023062318233299600_c16"
    },
    {
      "key": "2023062318233299600_c17",
      "doi-asserted-by": "publisher",
      "first-page": "232105",
      "DOI": "10.1063/1.3663968",
      "volume": "99",
      "year": "2011",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3679610/14251826/043507_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3679610/14251826/043507_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        24
      ]
    ],
    "date-time": "2023-06-24T08:39:45Z",
    "timestamp": 1687595985000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/100/4/043507/126272/A-Monte-Carlo-study-of-the-low-resistance-state"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2012,
        1,
        23
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2012,
          1,
          23
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3679610",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2012,
        1,
        23
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2012,
        1,
        23
      ]
    ]
  },
  "article-number": "043507"
}