DOI: 10.1063/1.3679174. Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers

Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers

10.1063/1.3679174

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Effect of electric field on the band structures of graphene/boron nitride (BN) and BN/BN bilayers is investigated within the framework of density functional theory. The calculated bandgap of the graphene/BN bilayer increases, although by small amount, with applied electric field. In the case of BN/BN bilayer, the bandgap decreases with the applied field in agreement with earlier studies. The modulation of bandgap in graphene/BN bilayers is dominated by the features of graphene and appears to be related to the modification in molecular orbitals as revealed by the calculated projected density of states.

Bibliography

Balu, R., Zhong, X., Pandey, R., & Karna, S. P. (2012). Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers. Applied Physics Letters, 100(5).

Authors 4

Radhakrishnan Balu (first)
Xiaoliang Zhong (additional)
Ravindra Pandey (additional)
Shashi P. Karna (additional)

References 19 Referenced 110

10.1126/science.1158877 / Science (2009)
10.1063/1.3276068 / App. Phys. Lett. (2009)
10.1103/PhysRevLett.101.036808 / Phys. Rev. Lett. (2008)
10.1002/smll.201001384 / Small (2010)
10.1103/PhysRevB.78.075435 / Phys. Rev. B (2008)
10.1038/nnano.2010.89 / Nat. Nanotechnol. (2010)
10.1063/1.3604019 / App. Phys. Lett. (2011)
10.1103/PhysRevB.75.155115 / Phys. Rev. B (2007)
10.1103/PhysRevB.83.193403 / Phys. Rev. B (2011)
{'key': '2023062418263593000_c10', 'first-page': '109', 'volume': '87', 'year': '2009', 'journal-title': 'Rev. Mod. Phys.'} / Rev. Mod. Phys. (2009)
10.1038/nature08105 / Nature (2009)
10.1063/1.3373571 / J. Appl. Phys. (2010)
{'volume-title': 'Electronic Structure: Basic Theory and Practical Methods', 'year': '2004', 'key': '2023062418263593000_c13'} / Electronic Structure: Basic Theory and Practical Methods (2004)
10.1103/PhysRevB.45.4460 / Phys. Rev. B (1992)
10.1103/PhysRevLett.96.136404 / Phys. Rev. Lett. (2006)
10.1016/j.carbon.2005.07.036 / Carbon (2006)
10.1103/PhysRevLett.42.662 / Phys. Rev. Lett. (1979)
{'key': '2023062418263593000_c17b', 'first-page': '864', 'volume': '24', 'year': '1981', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1981)
See supplementary material at http://dx.doi.org/10.1063/1.3679174 for calaculated total density of states (DOS) for graphene/BN bilayer with and without external elctric field, E, and a gaussian broadening (smearing) factor = 0.

Dates

Type	When
Created	13 years, 6 months ago (Jan. 30, 2012, 8 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 11:18 p.m.)
Indexed	3 weeks, 5 days ago (July 30, 2025, 6:58 a.m.)
Issued	13 years, 6 months ago (Jan. 30, 2012)
Published	13 years, 6 months ago (Jan. 30, 2012)
Published Online	13 years, 6 months ago (Jan. 30, 2012)
Published Print	13 years, 6 months ago (Jan. 30, 2012)

Funders 0

None

BibTeX

@article{Balu_2012, title={Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3679174}, DOI={10.1063/1.3679174}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Balu, Radhakrishnan and Zhong, Xiaoliang and Pandey, Ravindra and Karna, Shashi P.}, year={2012}, month=jan }

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