DOI: 10.1063/1.367876. Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation

10.1063/1.367876

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si(001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model was successfully applied to explain the shifting and broadening of the additional diffuse scattering.

Bibliography

Kim, C., Robinson, I. K., Spila, T., & Greene, J. E. (1998). Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation. Journal of Applied Physics, 83(12), 7608â7612.

Authors 4

Chinkyo Kim (first)
I. K. Robinson (additional)
T. Spila (additional)
J. E. Greene (additional)

References 39 Referenced 9

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:53 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 6:06 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:41 p.m.)
Issued	27 years, 2 months ago (June 15, 1998)
Published	27 years, 2 months ago (June 15, 1998)
Published Print	27 years, 2 months ago (June 15, 1998)

Funders 0

None

BibTeX

@article{Kim_1998, title={Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation}, volume={83}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.367876}, DOI={10.1063/1.367876}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kim, Chinkyo and Robinson, I. K. and Spila, T. and Greene, J. E.}, year={1998}, month=jun, pages={7608–7612} }

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