DOI: 10.1063/1.367861. Picotesla field sensor design using spin-dependent tunneling devices

Picotesla field sensor design using spin-dependent tunneling devices

10.1063/1.367861

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Pinned spin-dependent tunneling devices were fabricated and tested in a mode suited for low-field sensing. The basic structure of the devices was NiFeCo125/Al2O325/CoFe70/Ru9/CoFe70/ FeMn125 (in Å). This structure had a tunneling resistivity of 110 MΩ μm2 and exhibited a 20% magnetoresistance when a field was swept along the easy direction of the soft electrode. High sensitivity, low hysteresis operation was achieved by applying a bias field orthogonal to the easy axis. A sensitivity of 3%/Oe with negligible hysteresis was observed using this mode of operation. A sensor using this type of material was designed to achieve a minimum resolvable field in the picotesla range. The sensor consists of a bridge with four elements, each having 16 tunnel junctions in series. A signal-to-noise ratio of 1:1 at 1 pT (10−8 Oe) is possible assuming achievable values for the tunneling resistivity, device size, bias level, and sensitivity.

Bibliography

Tondra, M., Daughton, J. M., Wang, D., Beech, R. S., Fink, A., & Taylor, J. A. (1998). Picotesla field sensor design using spin-dependent tunneling devices. Journal of Applied Physics, 83(11), 6688â6690.

Authors 6

Mark Tondra (first)
James M. Daughton (additional)
Dexin Wang (additional)
Russell S. Beech (additional)
Anita Fink (additional)
John A. Taylor (additional)

References 9 Referenced 149

10.1103/PhysRevLett.25.1270 / Phys. Rev. Lett. (1970)
10.1103/PhysRevLett.26.192 / Phys. Rev. Lett. (1971)
10.1103/PhysRevB.7.318 / Phys. Rev. B (1973)
{'key': '2024020717100990200_r4', 'first-page': '16', 'volume': '74', 'year': '1995', 'journal-title': 'Phys. Rev. Lett.'} / Phys. Rev. Lett. (1995)
10.1016/0304-8853(95)90001-2 / J. Magn. Magn. Mater. (1995)
10.1063/1.117814 / Appl. Phys. Lett. (1996)
{'key': '2024020717100990200_r7'}
10.1109/20.539127 / IEEE Trans. Magn. (1996)
10.1063/1.365499 / J. Appl. Phys. (1997)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:53 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 6:04 p.m.)
Indexed	1 month, 3 weeks ago (July 4, 2025, 8:45 a.m.)
Issued	27 years, 2 months ago (June 1, 1998)
Published	27 years, 2 months ago (June 1, 1998)
Published Print	27 years, 2 months ago (June 1, 1998)

Funders 0

None

BibTeX

@article{Tondra_1998, title={Picotesla field sensor design using spin-dependent tunneling devices}, volume={83}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.367861}, DOI={10.1063/1.367861}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Tondra, Mark and Daughton, James M. and Wang, Dexin and Beech, Russell S. and Fink, Anita and Taylor, John A.}, year={1998}, month=jun, pages={6688–6690} }

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