DOI: 10.1063/1.3675633. Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices

10.1063/1.3675633

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Graphene-based non-volatile memory devices composed of a single-layer graphene channel and an Al2O3/HfOx/Al2O3 charge-storage layer exhibit memory functionality. The impact of the gate material’s work-function (Φ) on the memory characteristics is investigated using different types of metals [Ti (ΦTi = 4.3 eV) and Ni (ΦNi = 5.2 eV)]. The ambipolar carrier conduction of graphene results in an enlargement of memory window (ΔVM), which is ∼4.5 V for the Ti-gate device and ∼9.1 V for the Ni-gate device. The increase in ΔVM is attributed to the change in the flat-band condition and the suppression of electron back-injection within the gate stack.

Bibliography

Lee, S., Song, E. B., Kim, S., Seo, D. H., Seo, S., Won Kang, T., & Wang, K. L. (2012). Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices. Applied Physics Letters, 100(2).

Authors 7

Sejoon Lee (first)
Emil B. Song (additional)
Sungmin Kim (additional)
David H. Seo (additional)
Sunae Seo (additional)
Tae Won Kang (additional)
Kang L. Wang (additional)

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Dates

Type	When
Created	13 years, 7 months ago (Jan. 11, 2012, 9:23 a.m.)
Deposited	2 years ago (July 30, 2023, 8:54 p.m.)
Indexed	2 weeks, 2 days ago (Aug. 7, 2025, 4:52 p.m.)
Issued	13 years, 7 months ago (Jan. 9, 2012)
Published	13 years, 7 months ago (Jan. 9, 2012)
Published Online	13 years, 7 months ago (Jan. 10, 2012)
Published Print	13 years, 7 months ago (Jan. 9, 2012)

Funders 0

None

BibTeX

@article{Lee_2012, title={Impact of gate work-function on memory characteristics in Al2O3/HfOx/Al2O3/graphene charge-trap memory devices}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3675633}, DOI={10.1063/1.3675633}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Sejoon and Song, Emil B. and Kim, Sungmin and Seo, David H. and Seo, Sunae and Won Kang, Tae and Wang, Kang L.}, year={2012}, month=jan }

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