DOI: 10.1063/1.367452. Transport simulation of bulk AlxGa1−xN and the two-dimensional electron gas at the AlxGa1−xN/GaN interface

Transport simulation of bulk AlxGa1−xN and the two-dimensional electron gas at the AlxGa1−xN/GaN interface

10.1063/1.367452

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

In this work, a hybrid Monte Carlo simulation with the inclusion of degenerate statistics has been performed to analyze electron transport in bulk AlxGa1−xN, and the two-dimensional electron gas at the AlxGa1−xN/GaN interface. The results of the steady-state drift velocity, average electron energy, and distribution functions for bulk AlxGa1−xN are presented. A study of the change in transport properties with compositional variations has been made and presented here. Degeneracy has been found to affect electron transport in both the low- and the high-field regions. The inclusion of degeneracy caused a pronounced negative differential mobility. Simulation of the two-dimensional electron gas takes into account three subbands at the AlxGa1−xN/GaN interface. A self-consistent solution of the Schrödinger and Poisson equations at the heterointerface is obtained through a Rayleigh–Ritz method that should result in more accurate electron wave functions, and hence, more accurate scattering rates for the two-dimensional electron gas. The inclusion of degenerate statistics caused an increase in the interband occupancy in addition to an increase in the electron kinetic energy in the subbands.

Bibliography

Krishnan, M. S., Goldsman, N., & Christou, A. (1998). Transport simulation of bulk AlxGa1âxN and the two-dimensional electron gas at the AlxGa1âxN/GaN interface. Journal of Applied Physics, 83(11), 5896â5903.

Authors 3

Mahesh S. Krishnan (first)
Neil Goldsman (additional)
Aris Christou (additional)

References 29 Referenced 16

{'key': '2024020220343523400_r1', 'first-page': '195', 'volume': '31', 'year': '1991', 'journal-title': 'Jpn. J. Appl. Phys., Part 1'} / Jpn. J. Appl. Phys., Part 1 (1991)
{'key': '2024020220343523400_r2', 'volume': '62', 'year': '1993', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1993)
{'key': '2024020220343523400_r3', 'first-page': '136', 'volume': '95', 'year': '1995', 'journal-title': 'Electrochem. Soc. Proc.'} / Electrochem. Soc. Proc. (1995)
{'key': '2024020220343523400_r4', 'volume': '339', 'year': '1994', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1994)
10.1063/1.109207 / Appl. Phys. Lett. (1993)
10.1063/1.88002 / Appl. Phys. Lett. (1975)
10.1063/1.354787 / J. Appl. Phys. (1993)
10.1063/1.360405 / J. Appl. Phys. (1995)
10.1088/0022-3719/11/4/005 / J. Phys. C (1978)
{'key': '2024020220343523400_r10', 'first-page': '629', 'volume': '29', 'year': '1978', 'journal-title': 'Phys. Status Solidi A'} / Phys. Status Solidi A (1978)
10.1063/1.329998 / J. Appl. Phys. (1982)
10.1063/1.106798 / Appl. Phys. Lett. (1992)
10.1063/1.111511 / Appl. Phys. Lett. (1994)
{'key': '2024020220343523400_r14'}
{'key': '2024020220343523400_r15'}
10.1109/T-ED.1985.22291 / IEEE Trans. Electron Devices (1985)
10.1063/1.339529 / J. Appl. Phys. (1987)
{'key': '2024020220343523400_r18', 'first-page': '938', 'volume': '63', 'year': '1986', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1986)
10.1016/0038-1101(92)90106-M / Solid-State Electron. (1992)
10.1063/1.349389 / J. Appl. Phys. (1991)
10.1063/1.354548 / J. Appl. Phys. (1993)
{'key': '2024020220343523400_r22'}
10.1016/0038-1101(94)90099-X / Solid-State Electron. (1994)
{'key': '2024020220343523400_r24', 'first-page': '2917', 'volume': '62', 'year': '1992', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1992)
{'key': '2024020220343523400_r25'}
{'key': '2024020220343523400_r26'}
{'key': '2024020220343523400_r27'}
10.1103/PhysRevE.48.R17 / Phys. Rev. B (1993)
10.1063/1.360930 / J. Appl. Phys. (1996)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:53 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 4:12 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 7:59 a.m.)
Issued	27 years, 3 months ago (June 1, 1998)
Published	27 years, 3 months ago (June 1, 1998)
Published Print	27 years, 3 months ago (June 1, 1998)

Funders 0

None

BibTeX

@article{Krishnan_1998, title={Transport simulation of bulk AlxGa1ÔłĺxN and the two-dimensional electron gas at the AlxGa1ÔłĺxN/GaN interface}, volume={83}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.367452}, DOI={10.1063/1.367452}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Krishnan, Mahesh S. and Goldsman, Neil and Christou, Aris}, year={1998}, month=jun, pages={5896ÔÇô5903} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        7
      ]
    ],
    "date-time": "2024-02-07T12:59:12Z",
    "timestamp": 1707310752961
  },
  "reference-count": 29,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1998,
        6,
        1
      ]
    ]
  },
  "abstract": "<jats:p>In this work, a hybrid Monte Carlo simulation with the inclusion of degenerate statistics has been performed to analyze electron transport in bulk AlxGa1\u2212xN, and the two-dimensional electron gas at the AlxGa1\u2212xN/GaN interface. The results of the steady-state drift velocity, average electron energy, and distribution functions for bulk AlxGa1\u2212xN are presented. A study of the change in transport properties with compositional variations has been made and presented here. Degeneracy has been found to affect electron transport in both the low- and the high-field regions. The inclusion of degeneracy caused a pronounced negative differential mobility. Simulation of the two-dimensional electron gas takes into account three subbands at the AlxGa1\u2212xN/GaN interface. A self-consistent solution of the Schr\u00f6dinger and Poisson equations at the heterointerface is obtained through a Rayleigh\u2013Ritz method that should result in more accurate electron wave functions, and hence, more accurate scattering rates for the two-dimensional electron gas. The inclusion of degenerate statistics caused an increase in the interband occupancy in addition to an increase in the electron kinetic energy in the subbands.</jats:p>",
  "DOI": "10.1063/1.367452",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:53:21Z",
    "timestamp": 1027691601000
  },
  "page": "5896-5903",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 16,
  "title": "Transport simulation of bulk AlxGa1\u2212xN and the two-dimensional electron gas at the AlxGa1\u2212xN/GaN interface",
  "prefix": "10.1063",
  "volume": "83",
  "author": [
    {
      "given": "Mahesh S.",
      "family": "Krishnan",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of Maryland at College Park, College Park, Maryland\u200920742"
        }
      ]
    },
    {
      "given": "Neil",
      "family": "Goldsman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Maryland at College Park, College Park, Maryland\u200920742"
        }
      ]
    },
    {
      "given": "Aris",
      "family": "Christou",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Maryland at College Park, College Park, Maryland\u200920742"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020220343523400_r1",
      "first-page": "195",
      "volume": "31",
      "year": "1991",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020220343523400_r2",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220343523400_r3",
      "first-page": "136",
      "volume": "95",
      "year": "1995",
      "journal-title": "Electrochem. Soc. Proc."
    },
    {
      "key": "2024020220343523400_r4",
      "volume": "339",
      "year": "1994",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020220343523400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2859",
      "DOI": "10.1063/1.109207",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220343523400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "625",
      "DOI": "10.1063/1.88002",
      "volume": "26",
      "year": "1975",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220343523400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1818",
      "DOI": "10.1063/1.354787",
      "volume": "74",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020220343523400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1033",
      "DOI": "10.1063/1.360405",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020220343523400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "143",
      "DOI": "10.1088/0022-3719/11/4/005",
      "volume": "11",
      "year": "1978",
      "journal-title": "J. Phys. C"
    },
    {
      "key": "2024020220343523400_r10",
      "first-page": "629",
      "volume": "29",
      "year": "1978",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020220343523400_r11",
      "doi-asserted-by": "crossref",
      "first-page": "6844",
      "DOI": "10.1063/1.329998",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020220343523400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "3027",
      "DOI": "10.1063/1.106798",
      "volume": "60",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220343523400_r13",
      "doi-asserted-by": "crossref",
      "first-page": "223",
      "DOI": "10.1063/1.111511",
      "volume": "64",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220343523400_r14"
    },
    {
      "key": "2024020220343523400_r15"
    },
    {
      "key": "2024020220343523400_r16",
      "doi-asserted-by": "crossref",
      "first-page": "2431",
      "DOI": "10.1109/T-ED.1985.22291",
      "volume": "32",
      "year": "1985",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020220343523400_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1931",
      "DOI": "10.1063/1.339529",
      "volume": "62",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020220343523400_r18",
      "first-page": "938",
      "volume": "63",
      "year": "1986",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020220343523400_r19",
      "doi-asserted-by": "crossref",
      "first-page": "459",
      "DOI": "10.1016/0038-1101(92)90106-M",
      "volume": "35",
      "year": "1992",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020220343523400_r20",
      "doi-asserted-by": "crossref",
      "first-page": "2734",
      "DOI": "10.1063/1.349389",
      "volume": "70",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020220343523400_r21",
      "doi-asserted-by": "crossref",
      "first-page": "3273",
      "DOI": "10.1063/1.354548",
      "volume": "74",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020220343523400_r22"
    },
    {
      "key": "2024020220343523400_r23",
      "doi-asserted-by": "crossref",
      "first-page": "27",
      "DOI": "10.1016/0038-1101(94)90099-X",
      "volume": "37",
      "year": "1994",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020220343523400_r24",
      "first-page": "2917",
      "volume": "62",
      "year": "1992",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020220343523400_r25"
    },
    {
      "key": "2024020220343523400_r26"
    },
    {
      "key": "2024020220343523400_r27"
    },
    {
      "key": "2024020220343523400_r28",
      "doi-asserted-by": "crossref",
      "first-page": "17",
      "DOI": "10.1103/PhysRevE.48.R17",
      "volume": "48",
      "year": "1993",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020220343523400_r29",
      "doi-asserted-by": "crossref",
      "first-page": "188",
      "DOI": "10.1063/1.360930",
      "volume": "79",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/83/11/5896/18700434/5896_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/83/11/5896/18700434/5896_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T21:12:15Z",
    "timestamp": 1706908335000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/83/11/5896/487446/Transport-simulation-of-bulk-AlxGa1-xN-and-the-two"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1998,
        6,
        1
      ]
    ]
  },
  "references-count": 29,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          1998,
          6,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.367452",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1998,
        6,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1998,
        6,
        1
      ]
    ]
  }
}