DOI: 10.1063/1.3674311. Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films

10.1063/1.3674311

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In a phase change memory the device resistance corresponding to the amorphous phase monotonically increases with time after the reset programming operation. This phenomenon, called drift, affects the stability of the high resistive state, namely the reset state. In this work we investigate the resistance-drift process through ellipsometric measurements as a function of time in thin film of as-deposited amorphous Ge2Sb2Te5 alloy. We show a tight correlation between the resistance increase with time and the optical band gap widening extracted by ellipsometric measurements. This characterization supports the drift origin due to a structural atomic rearrangement of the amorphous network affecting the band structure that, in particular, promotes the increase of the energy gap and the reduction of localized states within the energy gap.

Bibliography

Fantini, P., Brazzelli, S., Cazzini, E., & Mani, A. (2012). Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films. Applied Physics Letters, 100(1).

Authors 4

P. Fantini (first)
S. Brazzelli (additional)
E. Cazzini (additional)
A. Mani (additional)

References 28 Referenced 69

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{'volume-title': 'Ellipsometry and Polarized Light', 'year': '1984', 'key': '2023073104472843000_c19'} / Ellipsometry and Polarized Light (1984)
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Dates

Type	When
Created	13 years, 7 months ago (Jan. 6, 2012, 11:48 a.m.)
Deposited	2 years, 1 month ago (July 31, 2023, 12:47 a.m.)
Indexed	1 month ago (July 30, 2025, 6:58 a.m.)
Issued	13 years, 7 months ago (Jan. 2, 2012)
Published	13 years, 7 months ago (Jan. 2, 2012)
Published Online	13 years, 7 months ago (Jan. 4, 2012)
Published Print	13 years, 7 months ago (Jan. 2, 2012)

Funders 0

None

BibTeX

@article{Fantini_2012, title={Band gap widening with time induced by structural relaxation in amorphous Ge2Sb2Te5 films}, volume={100}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3674311}, DOI={10.1063/1.3674311}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fantini, P. and Brazzelli, S. and Cazzini, E. and Mani, A.}, year={2012}, month=jan }

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