DOI: 10.1063/1.3673279. Electrical noise characteristics of a doped silicon microcantilever heater-thermometer

Electrical noise characteristics of a doped silicon microcantilever heater-thermometer

10.1063/1.3673279

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We measure the electrical noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296–781 K. The dominant noise source is 1/f below about 10 kHz, while at higher frequency, the dominant noise source is Johnson noise. The 1/f noise matches the Hooge model. The noise floor is about 10 nV/Hz1/2 and depends upon temperature, matching the theoretical Johnson noise. The Johnson noise-limited temperature resolution is about 1 μK/Hz1/2.

Bibliography

Corbin, E. A., & King, W. P. (2011). Electrical noise characteristics of a doped silicon microcantilever heater-thermometer. Applied Physics Letters, 99(26).

Authors 2

Elise A. Corbin (first)
William P. King (additional)

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See supplementary material at http://dx.doi.org/10.1063/1.3673279 for details of cantilever electrical and thermal characteristics and for experimental conditions.
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Dates

Type	When
Created	13 years, 8 months ago (Dec. 29, 2011, 7:06 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 1:53 p.m.)
Indexed	1 month ago (July 30, 2025, 6:57 a.m.)
Issued	13 years, 8 months ago (Dec. 26, 2011)
Published	13 years, 8 months ago (Dec. 26, 2011)
Published Online	13 years, 8 months ago (Dec. 29, 2011)
Published Print	13 years, 8 months ago (Dec. 26, 2011)

Funders 0

None

BibTeX

@article{Corbin_2011, title={Electrical noise characteristics of a doped silicon microcantilever heater-thermometer}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3673279}, DOI={10.1063/1.3673279}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Corbin, Elise A. and King, William P.}, year={2011}, month=dec }

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