DOI: 10.1063/1.366860. Hole transport and doping states in epitaxial CuIn1−xGaxSe2

Hole transport and doping states in epitaxial CuIn1−xGaxSe2

10.1063/1.366860

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Temperature dependent mobility, resistivity, and carrier concentration measurements were made on epitaxial single crystal thin films of group III-rich CuIn1−xGaxSe2 (CIGS). The films were produced using a hybrid sputtering and evaporation process on GaAs substrates. Samples with average Ga/(In+Ga) values between 0.03 and 1.0 and Cu/(In+Ga) between 0.73 and 1.00 were measured. All films were p type with room-temperature carrier concentrations between 4×1016 and 2×1019 cm−3. Fits to electrical measurements were consistent with the presence of two acceptor levels, with activation energies of 167±20 and 42±8 meV at low Ga contents, and compensating donors in all samples. Increasing Ga content was found to increase acceptor density and decrease acceptor level depth. Hole mobilities near room temperature were found to be between 167 and 311 cm2/V s and peak mobilities were between 439 and 1760 cm2/V s. Mobility behavior did not change significantly as a function of composition or the presence of a Ga gradient.

Bibliography

Schroeder, D. J., Hernandez, J. L., Berry, G. D., & Rockett, A. A. (1998). Hole transport and doping states in epitaxial CuIn1âxGaxSe2. Journal of Applied Physics, 83(3), 1519â1526.

Authors 4

David J. Schroeder (first)
Jose Luis Hernandez (additional)
Gene D. Berry (additional)
Angus A. Rockett (additional)

References 28 Referenced 74

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:43 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 3:45 p.m.)
Indexed	1 month, 1 week ago (July 27, 2025, 3:37 a.m.)
Issued	27 years, 7 months ago (Feb. 1, 1998)
Published	27 years, 7 months ago (Feb. 1, 1998)
Published Print	27 years, 7 months ago (Feb. 1, 1998)

Funders 0

None

BibTeX

@article{Schroeder_1998, title={Hole transport and doping states in epitaxial CuIn1−xGaxSe2}, volume={83}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.366860}, DOI={10.1063/1.366860}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schroeder, David J. and Hernandez, Jose Luis and Berry, Gene D. and Rockett, Angus A.}, year={1998}, month=feb, pages={1519–1526} }

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