Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The electronic structure of interfaces between lattice-mismatched semiconductors is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain—continuum elasticity [(CE), treated as a finite difference problem] and atomistic elasticity. While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g., 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C2 symmetry by the C4 symmetry in the CE method) when applied to C2-symmetric InAs pyramidal dots capped by GaAs.

Bibliography

Pryor, C., Kim, J., Wang, L. W., Williamson, A. J., & Zunger, A. (1998). Comparison of two methods for describing the strain profiles in quantum dots. Journal of Applied Physics, 83(5), 2548–2554.

Authors 5
  1. C. Pryor (first)
  2. J. Kim (additional)
  3. L. W. Wang (additional)
  4. A. J. Williamson (additional)
  5. A. Zunger (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:53 a.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 3:51 p.m.)
Indexed 2 months, 4 weeks ago (June 6, 2025, 5:08 a.m.)
Issued 27 years, 6 months ago (March 1, 1998)
Published 27 years, 6 months ago (March 1, 1998)
Published Print 27 years, 6 months ago (March 1, 1998)
Funders 0

None

@article{Pryor_1998, title={Comparison of two methods for describing the strain profiles in quantum dots}, volume={83}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.366631}, DOI={10.1063/1.366631}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Pryor, C. and Kim, J. and Wang, L. W. and Williamson, A. J. and Zunger, A.}, year={1998}, month=mar, pages={2548–2554} }