Abstract
The electronic structure of interfaces between lattice-mismatched semiconductors is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain—continuum elasticity [(CE), treated as a finite difference problem] and atomistic elasticity. While for small strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g., 7% for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C2 symmetry by the C4 symmetry in the CE method) when applied to C2-symmetric InAs pyramidal dots capped by GaAs.
References
17
Referenced
400
10.1016/S0960-8974(96)00090-3
/ Prog. Cryst. Growth Charact. Mater. (1996)10.1103/PhysRevB.52.11969
/ Phys. Rev. B (1995){'key': '2024020220090432000_r3'}
{'key': '2024020220090432000_r4'}
{'key': '2024020220090432000_r5'}
10.1103/PhysRev.145.637
/ Phys. Rev. (1966)10.1103/PhysRevB.1.4005
/ Phys. Rev. B (1970)10.1103/PhysRevB.30.6217
/ Phys. Rev. B (1984){'key': '2024020220090432000_r9', 'first-page': '18568', 'volume': '54', 'year': '1996', 'journal-title': 'Phys. Rev. B'}
/ Phys. Rev. B (1996)10.1063/1.112660
/ Appl. Phys. Lett. (1994)10.1103/PhysRevB.54.R2300
/ Phys. Rev. B (1996){'key': '2024020220090432000_r12'}
10.1103/PhysRevLett.69.1272
/ Phys. Rev. Lett. (1992){'key': '2024020220090432000_r14', 'first-page': '1446', 'volume': '53', 'year': '1996', 'journal-title': 'Phys. Rev. B'}
/ Phys. Rev. B (1996)10.1103/PhysRevB.51.10795
/ Phys. Rev. B (1995){'key': '2024020220090432000_r16'}
10.1103/PhysRevB.49.14337
/ Phys. Rev. B (1994)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:53 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 3:51 p.m.) |
Indexed | 2 months, 4 weeks ago (June 6, 2025, 5:08 a.m.) |
Issued | 27 years, 6 months ago (March 1, 1998) |
Published | 27 years, 6 months ago (March 1, 1998) |
Published Print | 27 years, 6 months ago (March 1, 1998) |
@article{Pryor_1998, title={Comparison of two methods for describing the strain profiles in quantum dots}, volume={83}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.366631}, DOI={10.1063/1.366631}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Pryor, C. and Kim, J. and Wang, L. W. and Williamson, A. J. and Zunger, A.}, year={1998}, month=mar, pages={2548–2554} }