Abstract
Thermoelectric properties of ScN thin films grown by reactive magnetron sputtering on Al2O3(0001) wafers are reported. X-ray diffraction and elastic recoil detection analyses show that the composition of the films is close to stoichiometry with trace amounts (∼1 at. % in total) of C, O, and F. We found that the ScN thin-film exhibits a rather low electrical resistivity of ∼2.94 μΩm, while its Seebeck coefficient is approximately ∼−86 μV/K at 800 K, yielding a power factor of ∼2.5 × 10−3 W/mK2. This value is anomalously high for common transition-metal nitrides.
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Dates
Type | When |
---|---|
Created | 13 years, 8 months ago (Dec. 9, 2011, 9:59 a.m.) |
Deposited | 2 years, 1 month ago (June 30, 2023, 5:20 p.m.) |
Indexed | 1 day, 5 hours ago (Aug. 26, 2025, 2:36 a.m.) |
Issued | 13 years, 8 months ago (Dec. 5, 2011) |
Published | 13 years, 8 months ago (Dec. 5, 2011) |
Published Online | 13 years, 8 months ago (Dec. 8, 2011) |
Published Print | 13 years, 8 months ago (Dec. 5, 2011) |
@article{Kerdsongpanya_2011, title={Anomalously high thermoelectric power factor in epitaxial ScN thin films}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3665945}, DOI={10.1063/1.3665945}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kerdsongpanya, Sit and Van Nong, Ngo and Pryds, Nini and Žukauskaitė, Agnė and Jensen, Jens and Birch, Jens and Lu, Jun and Hultman, Lars and Wingqvist, Gunilla and Eklund, Per}, year={2011}, month=dec }