DOI: 10.1063/1.3665405. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

10.1063/1.3665405

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm2 V−1 s−1 at room temperature and 275 000 cm2 V−1 s−1 at 4.2 K. The excellent quality is supported by the early development of the ν = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4.2 K. We also present a fast, simple, and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.

Bibliography

Zomer, P. J., Dash, S. P., Tombros, N., & van Wees, B. J. (2011). A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride. Applied Physics Letters, 99(23).

Authors 4

P. J. Zomer (first)
S. P. Dash (additional)
N. Tombros (additional)
B. J. van Wees (additional)

References 14 Referenced 341

10.1021/nl070613a / Nano Lett. (2007)
10.1143/JPSJ.75.074716 / J. Phys. Soc. Jpn. (2006)
10.1038/nnano.2008.58 / Nat. Nanotechnol. (2008)
10.1016/j.ssc.2008.02.024 / Solid State Commun. (2008)
10.1063/1.3579997 / J. Appl. Phys. (2011)
10.1038/nphys2049 / Nat. Phys. (2011)
10.1016/j.jcrysgro.2006.12.061 / J. Cryst. Growth (2007)
10.1038/nnano.2010.172 / Nat. Nanotechnol. (2010)
10.1038/nmat2968 / Nature Mater. (2011)
10.1021/nl2005115 / Nano Lett. (2011)
10.1038/nphys2007 / Nat. Phys. (2011)
10.1038/nphys2008 / Nat. Phys. (2011)
10.1021/nl200758b / Nano Lett. (2011)
10.1103/PhysRevLett.98.186806 / Phys. Rev. Lett. (2007)

Dates

Type	When
Created	13 years, 8 months ago (Dec. 6, 2011, 6:15 p.m.)
Deposited	2 years, 1 month ago (June 30, 2023, 5:22 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 2, 2025, 12:45 a.m.)
Issued	13 years, 8 months ago (Dec. 5, 2011)
Published	13 years, 8 months ago (Dec. 5, 2011)
Published Online	13 years, 8 months ago (Dec. 6, 2011)
Published Print	13 years, 8 months ago (Dec. 5, 2011)

Funders 0

None

BibTeX

@article{Zomer_2011, title={A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3665405}, DOI={10.1063/1.3665405}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zomer, P. J. and Dash, S. P. and Tombros, N. and van Wees, B. J.}, year={2011}, month=dec }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        2
      ]
    ],
    "date-time": "2025-08-02T04:45:07Z",
    "timestamp": 1754109907485,
    "version": "3.41.2"
  },
  "reference-count": 14,
  "publisher": "AIP Publishing",
  "issue": "23",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2011,
        12,
        5
      ]
    ]
  },
  "abstract": "<jats:p>We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125\u2009000 cm2 V\u22121 s\u22121 at room temperature and 275\u2009000 cm2 V\u22121 s\u22121 at 4.2\u2009K. The excellent quality is supported by the early development of the \u03bd\u2009=\u20091 quantum Hall plateau at a magnetic field of 5\u2009T and temperature of 4.2\u2009K. We also present a fast, simple, and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.</jats:p>",
  "DOI": "10.1063/1.3665405",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        12,
        6
      ]
    ],
    "date-time": "2011-12-06T23:15:03Z",
    "timestamp": 1323213303000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 341,
  "title": "A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride",
  "prefix": "10.1063",
  "volume": "99",
  "author": [
    {
      "given": "P. J.",
      "family": "Zomer",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen , Groningen, The Netherlands"
        }
      ]
    },
    {
      "given": "S. P.",
      "family": "Dash",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen , Groningen, The Netherlands"
        }
      ]
    },
    {
      "given": "N.",
      "family": "Tombros",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen , Groningen, The Netherlands"
        }
      ]
    },
    {
      "given": "B. J.",
      "family": "van Wees",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen , Groningen, The Netherlands"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2011,
        12,
        6
      ]
    ]
  },
  "reference": [
    {
      "key": "2023063021221090000_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1643",
      "DOI": "10.1021/nl070613a",
      "volume": "7",
      "year": "2007",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023063021221090000_c2",
      "doi-asserted-by": "publisher",
      "first-page": "074716",
      "DOI": "10.1143/JPSJ.75.074716",
      "volume": "75",
      "year": "2006",
      "journal-title": "J. Phys. Soc. Jpn."
    },
    {
      "key": "2023063021221090000_c3",
      "doi-asserted-by": "publisher",
      "first-page": "206",
      "DOI": "10.1038/nnano.2008.58",
      "volume": "3",
      "year": "2008",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023063021221090000_c4",
      "doi-asserted-by": "publisher",
      "first-page": "351",
      "DOI": "10.1016/j.ssc.2008.02.024",
      "volume": "146",
      "year": "2008",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2023063021221090000_c5",
      "doi-asserted-by": "publisher",
      "first-page": "093702",
      "DOI": "10.1063/1.3579997",
      "volume": "109",
      "year": "2011",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023063021221090000_c6",
      "doi-asserted-by": "publisher",
      "first-page": "701",
      "DOI": "10.1038/nphys2049",
      "volume": "7",
      "year": "2011",
      "journal-title": "Nat. Phys."
    },
    {
      "key": "2023063021221090000_c7",
      "doi-asserted-by": "publisher",
      "first-page": "525",
      "DOI": "10.1016/j.jcrysgro.2006.12.061",
      "volume": "303",
      "year": "2007",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023063021221090000_c8",
      "doi-asserted-by": "publisher",
      "first-page": "722",
      "DOI": "10.1038/nnano.2010.172",
      "volume": "5",
      "year": "2010",
      "journal-title": "Nat. Nanotechnol."
    },
    {
      "key": "2023063021221090000_c9",
      "doi-asserted-by": "publisher",
      "first-page": "282",
      "DOI": "10.1038/nmat2968",
      "volume": "10",
      "year": "2011",
      "journal-title": "Nature Mater."
    },
    {
      "key": "2023063021221090000_c10",
      "doi-asserted-by": "publisher",
      "first-page": "2291",
      "DOI": "10.1021/nl2005115",
      "volume": "11",
      "year": "2011",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023063021221090000_c11",
      "doi-asserted-by": "publisher",
      "first-page": "693",
      "DOI": "10.1038/nphys2007",
      "volume": "7",
      "year": "2011",
      "journal-title": "Nat. Phys."
    },
    {
      "key": "2023063021221090000_c12",
      "doi-asserted-by": "publisher",
      "first-page": "621",
      "DOI": "10.1038/nphys2008",
      "volume": "7",
      "year": "2011",
      "journal-title": "Nat. Phys."
    },
    {
      "key": "2023063021221090000_c13",
      "doi-asserted-by": "publisher",
      "first-page": "2396",
      "DOI": "10.1021/nl200758b",
      "volume": "11",
      "year": "2011",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023063021221090000_c14",
      "doi-asserted-by": "publisher",
      "first-page": "186806",
      "DOI": "10.1103/PhysRevLett.98.186806",
      "volume": "98",
      "year": "2007",
      "journal-title": "Phys. Rev. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3665405/14460681/232104_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3665405/14460681/232104_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        30
      ]
    ],
    "date-time": "2023-06-30T21:22:17Z",
    "timestamp": 1688160137000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/99/23/232104/282290/A-transfer-technique-for-high-mobility-graphene"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        12,
        5
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "23",
    "published-print": {
      "date-parts": [
        [
          2011,
          12,
          5
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3665405",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2011,
        12,
        5
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2011,
        12,
        5
      ]
    ]
  },
  "article-number": "232104"
}