Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.

Bibliography

Matsunaga, T., Fons, P., Kolobov, A. V., Tominaga, J., & Yamada, N. (2011). The order-disorder transition in GeTe: Views from different length-scales. Applied Physics Letters, 99(23).

Authors 5
  1. T. Matsunaga (first)
  2. P. Fons (additional)
  3. A. V. Kolobov (additional)
  4. J. Tominaga (additional)
  5. N. Yamada (additional)
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Dates
Type When
Created 13 years, 8 months ago (Dec. 9, 2011, 9:59 a.m.)
Deposited 2 years, 1 month ago (June 30, 2023, 5:19 p.m.)
Indexed 3 weeks ago (July 30, 2025, 6:57 a.m.)
Issued 13 years, 8 months ago (Dec. 5, 2011)
Published 13 years, 8 months ago (Dec. 5, 2011)
Published Online 13 years, 8 months ago (Dec. 8, 2011)
Published Print 13 years, 8 months ago (Dec. 5, 2011)
Funders 0

None

@article{Matsunaga_2011, title={The order-disorder transition in GeTe: Views from different length-scales}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3665067}, DOI={10.1063/1.3665067}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Matsunaga, T. and Fons, P. and Kolobov, A. V. and Tominaga, J. and Yamada, N.}, year={2011}, month=dec }