Abstract
GeTe is a narrow band gap semiconductor that undergoes a ferroelectric-to-paraelectric phase transition at ∼705 K. While earlier studies of average structure using Bragg diffraction concluded that the transition was displacive, structural probing of short and intermediate order shows evidence for an order-disorder transition. Here, we report and contrast the structure on different length scales with temperature using a radial distribution function analysis obtained from x-ray based total scattering and show that the order-disorder model is consistent with experiment.
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Dates
Type | When |
---|---|
Created | 13 years, 8 months ago (Dec. 9, 2011, 9:59 a.m.) |
Deposited | 2 years, 1 month ago (June 30, 2023, 5:19 p.m.) |
Indexed | 3 weeks ago (July 30, 2025, 6:57 a.m.) |
Issued | 13 years, 8 months ago (Dec. 5, 2011) |
Published | 13 years, 8 months ago (Dec. 5, 2011) |
Published Online | 13 years, 8 months ago (Dec. 8, 2011) |
Published Print | 13 years, 8 months ago (Dec. 5, 2011) |
@article{Matsunaga_2011, title={The order-disorder transition in GeTe: Views from different length-scales}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3665067}, DOI={10.1063/1.3665067}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Matsunaga, T. and Fons, P. and Kolobov, A. V. and Tominaga, J. and Yamada, N.}, year={2011}, month=dec }