DOI: 10.1063/1.365859. Persistent photoconductivity in n-type GaN

Persistent photoconductivity in n-type GaN

10.1063/1.365859

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Results of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. Similar to the photoluminescence spectra, the photoconductivity also shows a broad yellow band centered around 2.2 eV. It is found that persistent photoconductivity (PPC) does exist in all the studied thin films. In addition, the PPC effects can be observed for the pumping photon energy down to the yellow band. The results reveal that the origin of the PPC effect and yellow luminescence may arise from the same intrinsic defect. It is shown that the most probable candidate of the intrinsic defect is nitrogen antisite.

Bibliography

Chen, H. M., Chen, Y. F., Lee, M. C., & Feng, M. S. (1997). Persistent photoconductivity in n-type GaN. Journal of Applied Physics, 82(2), 899â901.

Authors 4

H. M. Chen (first)
Y. F. Chen (additional)
M. C. Lee (additional)
M. S. Feng (additional)

References 24 Referenced 116

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:52 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 3:14 p.m.)
Indexed	2 months ago (July 2, 2025, 1:45 a.m.)
Issued	28 years, 1 month ago (July 15, 1997)
Published	28 years, 1 month ago (July 15, 1997)
Published Print	28 years, 1 month ago (July 15, 1997)

Funders 0

None

BibTeX

@article{Chen_1997, title={Persistent photoconductivity in n-type GaN}, volume={82}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.365859}, DOI={10.1063/1.365859}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Chen, H. M. and Chen, Y. F. and Lee, M. C. and Feng, M. S.}, year={1997}, month=jul, pages={899–901} }

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