DOI: 10.1063/1.365696. Si/Si 1−x Ge x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation

Si/Si 1−x Ge x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation

10.1063/1.365696

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Using an ensemble Monte Carlo simulation, we study the electron transport properties in tensile strained Si grown on a Si1−xGex substrate and in an n-channel Si/Si1−xGex modulation-doped field-effect transistor (MODFET). Owing to the strain-induced modification of the conduction-band structure, the in-plane drift mobility in undoped material reaches 3250 cm2/V s at 300 K (for x⩾0.2) and 31000 cm2/V s at 77 K (for x⩾0.05). The two-dimensional Monte Carlo modeling of 0.18 μm gate Si/SiGe MODFETs reveals a high velocity overshoot of 2.5×107 cm/s related to a significant ballistic transport through the gated part of the strained Si channel. For a 0.18 μm gate and a Ge mole fraction x=0.3, intrinsic transconductance and transition frequency as high as 460 mS/mm and 85 GHz are obtained.

Bibliography

Dollfus, P. (1997). Si/Si 1âx Ge x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation. Journal of Applied Physics, 82(8), 3911â3916.

Authors 1

Philippe Dollfus (first)

References 22 Referenced 66

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 3:28 p.m.)
Indexed	2 months, 1 week ago (June 24, 2025, 7:43 a.m.)
Issued	27 years, 10 months ago (Oct. 15, 1997)
Published	27 years, 10 months ago (Oct. 15, 1997)
Published Print	27 years, 10 months ago (Oct. 15, 1997)

Funders 0

None

BibTeX

@article{Dollfus_1997, title={Si/Si 1−x Ge x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation}, volume={82}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.365696}, DOI={10.1063/1.365696}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Dollfus, Philippe}, year={1997}, month=oct, pages={3911–3916} }

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