Abstract
We report on the development of a novel technique designed to study dimensional effects in sputter-deposited magnetic materials and multilayer nanostructures without the need for post-deposition patterning. Wires with widths ranging from 40 to 1000 nm have been deposited on Si wafer substrates through a deposition mask fabricated by e-beam lithography. A bilevel resist masking scheme allows smooth, near vertical sidewall profiles, and the resulting structures can be exposed using a simple lift-off process. This process was used to fabricate test structures of Fe, Cu, and Co which were characterized by scanning electron microscopy, atomic force microscopy, and ac resistivity measurements from 3 to 300 K. While the wire structures are geometrically well defined, transport measurements reveal high crystalline defect densities which must be eliminated to fabricate low-dimensional magnetoresistive structures.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:52 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 2:48 p.m.) |
Indexed | 5 months, 1 week ago (March 22, 2025, 4:31 a.m.) |
Issued | 28 years, 4 months ago (April 15, 1997) |
Published | 28 years, 4 months ago (April 15, 1997) |
Published Print | 28 years, 4 months ago (April 15, 1997) |
@article{Park_1997, title={Fabrication of nanometer-sized magnetic structures using e-beam patterned deposition masks}, volume={81}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.365538}, DOI={10.1063/1.365538}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Park, Y. D. and Caballero, J. A. and Cabbibo, A. and Childress, J. R. and Hudspeth, H. D. and Schultz, T. J. and Sharifi, F.}, year={1997}, month=apr, pages={4717–4719} }