DOI: 10.1063/1.365264. Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides

Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides

10.1063/1.365264

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Medium energy ion scattering has been used to study the role of nitrogen in the thermal oxidation kinetics of ultrathin silicon oxynitrides. Oxynitride films with different amounts of nitrogen near the SiOxNy/Si interface and pure (control) SiO2/Si films were reoxidized in dry O218 under equivalent conditions. The spatial distribution of O18 incorporated into the films was analyzed by high-resolution depth profiling methods. Analogous to the pure SiO2 case, we observed two distinct regions where oxygen incorporation into the oxynitride films occurs: at/near the interface and near the outer oxide surface. The (near) interface oxide growth reaction is found to be significantly retarded by the presence of near-interfacial nitrogen (with a higher degree of the retardation for higher concentrations of nitrogen). The presence of nitrogen near the interface does not affect the surface exchange reaction.

Bibliography

Lu, H. C., Gusev, E. P., Gustafsson, T., & Garfunkel, E. (1997). Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides. Journal of Applied Physics, 81(10), 6992â6995.

Authors 4

H. C. Lu (first)
E. P. Gusev (additional)
T. Gustafsson (additional)
E. Garfunkel (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:52 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 3 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 11:08 a.m.)
Issued	28 years, 3 months ago (May 15, 1997)
Published	28 years, 3 months ago (May 15, 1997)
Published Print	28 years, 3 months ago (May 15, 1997)

Funders 0

None

BibTeX

@article{Lu_1997, title={Effect of near-interfacial nitrogen on the oxidation behavior of ultrathin silicon oxynitrides}, volume={81}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.365264}, DOI={10.1063/1.365264}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lu, H. C. and Gusev, E. P. and Gustafsson, T. and Garfunkel, E.}, year={1997}, month=may, pages={6992–6995} }

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