DOI: 10.1063/1.363631. The metastable changes of the trap spectra of CuInSe2-based photovoltaic devices

The metastable changes of the trap spectra of CuInSe2-based photovoltaic devices

10.1063/1.363631

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Spectra of hole and electron traps of CuInSe2/CdS/ZnO photovoltaic devices have been investigated using deep-level transient spectroscopy. A decrease of the concentration of shallow electron traps and an increase of the hole trap concentration after an injection of electrons has been observed. The effect is metastable below 200 K. A proposed explanation is based on the idea that both levels belong to the same defect in a different charge state. A resemblance of the phenomena related to that defect and to ‘‘dangling bond’’-type centers in amorphous semiconductors has been indicated. Some consequences of defect conversion for current transport and performance of photovoltaic devices have been discussed.

Bibliography

Igalson, M., & Schock, H. W. (1996). The metastable changes of the trap spectra of CuInSe2-based photovoltaic devices. Journal of Applied Physics, 80(10), 5765â5769.

Authors 2

M. Igalson (first)
H. W. Schock (additional)

References 19 Referenced 105

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10.1016/0379-6787(91)90048-T / Sol. Cells (1991)
{'key': '2024020217512311700_r5'}
{'key': '2024020217512311700_r6'}
10.1007/BF02665026 / J. Electron. Mater. (1993)
{'key': '2024020217512311700_r8'}
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10.1063/1.357528 / J. Appl. Phys. (1994)
10.1002/pssa.2211390221 / Phys. Status Solidi B (1993)
{'key': '2024020217512311700_r12'}
10.1063/1.332914 / J. Appl. Phys. (1984)
10.1016/0379-6787(89)90082-3 / Sol. Cells (1989)
{'key': '2024020217512311700_r15', 'first-page': '327', 'volume': '164–166', 'year': '1993', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1993)
10.1103/PhysRevB.51.2173 / Phys. Rev. B (1995)
{'key': '2024020217512311700_r17', 'first-page': '445', 'volume': '31', 'year': '1996', 'journal-title': 'Cryst. Res. Technol.'} / Cryst. Res. Technol. (1996)
{'key': '2024020217512311700_r18'}
10.1016/0379-6787(86)90110-9 / Sol. Cells (1986)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:50 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 2:08 p.m.)
Indexed	3 months, 2 weeks ago (May 22, 2025, 10:28 p.m.)
Issued	28 years, 9 months ago (Nov. 15, 1996)
Published	28 years, 9 months ago (Nov. 15, 1996)
Published Print	28 years, 9 months ago (Nov. 15, 1996)

Funders 0

None

BibTeX

@article{Igalson_1996, title={The metastable changes of the trap spectra of CuInSe2-based photovoltaic devices}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363631}, DOI={10.1063/1.363631}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Igalson, M. and Schock, H. W.}, year={1996}, month=nov, pages={5765–5769} }

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