DOI: 10.1063/1.363624. Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2

Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2

10.1063/1.363624

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 Å.

Bibliography

LÃ¶her, T., Tomm, Y., Klein, A., Su, D., Pettenkofer, C., & Jaegermann, W. (1996). Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2. Journal of Applied Physics, 80(10), 5718â5722.

Authors 6

T. Löher (first)
Y. Tomm (additional)
A. Klein (additional)
D. Su (additional)
C. Pettenkofer (additional)
W. Jaegermann (additional)

References 26 Referenced 30

{'key': '2024020217480899600_r1', 'first-page': '1611', 'volume': 'QE-22', 'year': '1986', 'journal-title': 'IEEE J. Quantum Electron.'} / IEEE J. Quantum Electron. (1986)
10.1016/0167-5729(93)90021-G / Surf. Sci. Rep. (1993)
10.1016/0039-6028(86)90471-1 / Surf. Sci. (1986)
{'key': '2024020217480899600_r4', 'first-page': '451', 'volume': '41/42', 'year': '1989', 'journal-title': 'Appl. Surf. Sci.'} / Appl. Surf. Sci. (1989)
10.1016/0040-6090(92)90872-9 / Thin Solid Films (1992)
10.1016/0022-0248(91)91126-U / J. Cryst. Growth (1991)
10.1063/1.346574 / J. Appl. Phys. (1990)
10.1063/1.104611 / Appl. Phys. Lett. (1991)
10.1016/0169-4332(93)90705-G / Appl. Surf. Sci. (1993)
10.1016/0022-0248(94)90719-6 / J. Cryst. Growth (1994)
10.1016/0039-6028(94)90610-6 / Surf. Sci. Lett. (1994)
10.1557/PROC-263-291 / Mater. Res. Soc. Symp. Proc. (1992)
10.1063/1.356562 / J. Appl. Phys. (1994)
10.1063/1.355038 / J. Appl. Phys. (1993)
10.1063/1.112294 / Appl. Phys. Lett. (1994)
10.1016/0022-0248(91)91066-J / J. Cryst. Growth (1991)
{'key': '2024020217480899600_r17'}
{'key': '2024020217480899600_r18'}
{'key': '2024020217480899600_r19'}
10.1016/0022-0248(94)00505-2 / J. Cryst. Growth (1995)
{'key': '2024020217480899600_r21'}
{'key': '2024020217480899600_r22'}
10.1143/JJAP.32.2945 / Jpn. J. Appl. Phys. (1993)
{'key': '2024020217480899600_r24'}
10.1016/0167-5729(89)90001-0 / Surf. Sci. Rep. (1989)
10.1149/1.2425775 / J. Electrochem. Soc. (1963)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:50 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 2:06 p.m.)
Indexed	2 months, 1 week ago (June 16, 2025, 8:06 p.m.)
Issued	28 years, 9 months ago (Nov. 15, 1996)
Published	28 years, 9 months ago (Nov. 15, 1996)
Published Print	28 years, 9 months ago (Nov. 15, 1996)

Funders 0

None

BibTeX

@article{L_her_1996, title={Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363624}, DOI={10.1063/1.363624}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Löher, T. and Tomm, Y. and Klein, A. and Su, D. and Pettenkofer, C. and Jaegermann, W.}, year={1996}, month=nov, pages={5718–5722} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        17
      ]
    ],
    "date-time": "2025-06-17T00:06:17Z",
    "timestamp": 1750118777023
  },
  "reference-count": 26,
  "publisher": "AIP Publishing",
  "issue": "10",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        11,
        15
      ]
    ]
  },
  "abstract": "<jats:p>The II\u2013VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170\u2013370\u2009\u00b0C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200\u2013400 \u00c5.</jats:p>",
  "DOI": "10.1063/1.363624",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:50:59Z",
    "timestamp": 1027691459000
  },
  "page": "5718-5722",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 30,
  "title": "Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2",
  "prefix": "10.1063",
  "volume": "80",
  "author": [
    {
      "given": "T.",
      "family": "L\u00f6her",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Hahn-Meitner-Institut, Abtlg. CG, Glienicker Strasse 100, 14109 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Y.",
      "family": "Tomm",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hahn-Meitner-Institut, Abtlg. CG, Glienicker Strasse 100, 14109 Berlin, Germany"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Klein",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hahn-Meitner-Institut, Abtlg. CG, Glienicker Strasse 100, 14109 Berlin, Germany"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Su",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hahn-Meitner-Institut, Abtlg. CG, Glienicker Strasse 100, 14109 Berlin, Germany"
        }
      ]
    },
    {
      "given": "C.",
      "family": "Pettenkofer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hahn-Meitner-Institut, Abtlg. CG, Glienicker Strasse 100, 14109 Berlin, Germany"
        }
      ]
    },
    {
      "given": "W.",
      "family": "Jaegermann",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Hahn-Meitner-Institut, Abtlg. CG, Glienicker Strasse 100, 14109 Berlin, Germany"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020217480899600_r1",
      "first-page": "1611",
      "volume": "QE-22",
      "year": "1986",
      "journal-title": "IEEE J. Quantum Electron."
    },
    {
      "key": "2024020217480899600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1016/0167-5729(93)90021-G",
      "volume": "19",
      "year": "1993",
      "journal-title": "Surf. Sci. Rep."
    },
    {
      "key": "2024020217480899600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "556",
      "DOI": "10.1016/0039-6028(86)90471-1",
      "volume": "174",
      "year": "1986",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2024020217480899600_r4",
      "first-page": "451",
      "volume": "41/42",
      "year": "1989",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024020217480899600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "72",
      "DOI": "10.1016/0040-6090(92)90872-9",
      "volume": "216",
      "year": "1992",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020217480899600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1029",
      "DOI": "10.1016/0022-0248(91)91126-U",
      "volume": "111",
      "year": "1991",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020217480899600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "2168",
      "DOI": "10.1063/1.346574",
      "volume": "68",
      "year": "1990",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217480899600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "472",
      "DOI": "10.1063/1.104611",
      "volume": "58",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217480899600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "479",
      "DOI": "10.1016/0169-4332(93)90705-G",
      "volume": "65/66",
      "year": "1993",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024020217480899600_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1016/0022-0248(94)90719-6",
      "volume": "135",
      "year": "1994",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020217480899600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "L343",
      "DOI": "10.1016/0039-6028(94)90610-6",
      "volume": "303",
      "year": "1994",
      "journal-title": "Surf. Sci. Lett."
    },
    {
      "key": "2024020217480899600_r12",
      "doi-asserted-by": "crossref",
      "first-page": "291",
      "DOI": "10.1557/PROC-263-291",
      "volume": "263",
      "year": "1992",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020217480899600_r13",
      "doi-asserted-by": "crossref",
      "first-page": "7805",
      "DOI": "10.1063/1.356562",
      "volume": "75",
      "year": "1994",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217480899600_r14",
      "doi-asserted-by": "crossref",
      "first-page": "7211",
      "DOI": "10.1063/1.355038",
      "volume": "74",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217480899600_r15",
      "doi-asserted-by": "crossref",
      "first-page": "555",
      "DOI": "10.1063/1.112294",
      "volume": "65",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217480899600_r16",
      "doi-asserted-by": "crossref",
      "first-page": "698",
      "DOI": "10.1016/0022-0248(91)91066-J",
      "volume": "111",
      "year": "1991",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020217480899600_r17"
    },
    {
      "key": "2024020217480899600_r18"
    },
    {
      "key": "2024020217480899600_r19"
    },
    {
      "key": "2024020217480899600_r20",
      "doi-asserted-by": "crossref",
      "first-page": "408",
      "DOI": "10.1016/0022-0248(94)00505-2",
      "volume": "146",
      "year": "1995",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020217480899600_r21"
    },
    {
      "key": "2024020217480899600_r22"
    },
    {
      "key": "2024020217480899600_r23",
      "doi-asserted-by": "crossref",
      "first-page": "2945",
      "DOI": "10.1143/JJAP.32.2945",
      "volume": "32",
      "year": "1993",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020217480899600_r24"
    },
    {
      "key": "2024020217480899600_r25",
      "doi-asserted-by": "crossref",
      "first-page": "277",
      "DOI": "10.1016/0167-5729(89)90001-0",
      "volume": "10",
      "year": "1989",
      "journal-title": "Surf. Sci. Rep."
    },
    {
      "key": "2024020217480899600_r26",
      "doi-asserted-by": "crossref",
      "first-page": "407",
      "DOI": "10.1149/1.2425775",
      "volume": "110",
      "year": "1963",
      "journal-title": "J. Electrochem. Soc."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/80/10/5718/18688526/5718_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/80/10/5718/18688526/5718_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T19:06:37Z",
    "timestamp": 1706900797000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/80/10/5718/494841/Highly-oriented-layers-of-the-three-dimensional"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        11,
        15
      ]
    ]
  },
  "references-count": 26,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          1996,
          11,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.363624",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        11,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        11,
        15
      ]
    ]
  }
}