Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The thermal stability of hydrogen and sulfur atoms in a-SiSx:H films is studied using gas effusion spectra and electron spectroscopy for chemical analysis. Two evolution peaks of hydrogen are found above 400 °C in gas effusion spectra of a-SiSx:H films. Sulfur atoms are evolved only above 550 °C. The stability of sulfur and the relationship of dangling bonds to sulfur effusion are discussed.

Bibliography

Itoh, T., Nitta, S., Wang, S. L., & Taylor, P. C. (1996). Thermal stability of hydrogen and sulfur atoms in a-SiSx:H films. Journal of Applied Physics, 80(10), 6028–6031.

Authors 4
  1. Takashi Itoh (first)
  2. Shoji Nitta (additional)
  3. S. L. Wang (additional)
  4. P. C. Taylor (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:33 a.m.)
Deposited 1 year, 7 months ago (Feb. 2, 2024, 2:10 p.m.)
Indexed 1 year, 7 months ago (Feb. 2, 2024, 2:40 p.m.)
Issued 28 years, 9 months ago (Nov. 15, 1996)
Published 28 years, 9 months ago (Nov. 15, 1996)
Published Print 28 years, 9 months ago (Nov. 15, 1996)
Funders 0

None

@article{Itoh_1996, title={Thermal stability of hydrogen and sulfur atoms in a-SiSx:H films}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363602}, DOI={10.1063/1.363602}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Itoh, Takashi and Nitta, Shoji and Wang, S. L. and Taylor, P. C.}, year={1996}, month=nov, pages={6028–6031} }