Abstract
The thermal stability of hydrogen and sulfur atoms in a-SiSx:H films is studied using gas effusion spectra and electron spectroscopy for chemical analysis. Two evolution peaks of hydrogen are found above 400 °C in gas effusion spectra of a-SiSx:H films. Sulfur atoms are evolved only above 550 °C. The stability of sulfur and the relationship of dangling bonds to sulfur effusion are discussed.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:33 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 2:10 p.m.) |
Indexed | 1 year, 7 months ago (Feb. 2, 2024, 2:40 p.m.) |
Issued | 28 years, 9 months ago (Nov. 15, 1996) |
Published | 28 years, 9 months ago (Nov. 15, 1996) |
Published Print | 28 years, 9 months ago (Nov. 15, 1996) |
@article{Itoh_1996, title={Thermal stability of hydrogen and sulfur atoms in a-SiSx:H films}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363602}, DOI={10.1063/1.363602}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Itoh, Takashi and Nitta, Shoji and Wang, S. L. and Taylor, P. C.}, year={1996}, month=nov, pages={6028–6031} }