DOI: 10.1063/1.363583. Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si

Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si

10.1063/1.363583

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Stoichiometric (Ba0.5Sr0.5)TiO3 (BST) thin films with various thicknesses have been prepared on Pt/SiO2/Si substrates using conventional rf magnetron sputtering method with a ceramic target containing excess BaO and SrO. With increasing film thickness, the grain size of the BST films gradually increased. It was observed that the dielectric constant increased from 348 to 758 when grain size increased from 32 to 82 nm in BST films deposited at 600 °C. The decrease of dielectric constant in thinner BST films was attributed to the initial low dielectric constant layer and small grain size. In the current–voltage curves for BST films, higher leakage current densities and narrower flat regions (hopping conduction region) in the low bias field were obtained with increasing grain size.

Bibliography

Lee, W.-J., Kim, H.-G., & Yoon, S.-G. (1996). Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si. Journal of Applied Physics, 80(10), 5891â5894.

Authors 3

Won-Jae Lee (first)
Ho-Gi Kim (additional)
Soon-Gil Yoon (additional)

References 11 Referenced 81

{'key': '2024020217475094300_r1', 'first-page': '823', 'volume': '91', 'year': '1991', 'journal-title': 'Tech. Dig. IEEE Int. Electron Devices Meet.'} / Tech. Dig. IEEE Int. Electron Devices Meet. (1991)
10.1063/1.111818 / Appl. Phys. Lett. (1994)
{'key': '2024020217475094300_r3'}
{'key': '2024020217475094300_r4'}
10.1063/1.357547 / J. Appl. Phys. (1994)
10.1143/JJAP.32.4175 / Jpn. J. Appl. Phys. (1993)
10.1143/JJAP.32.4126 / Jpn. J. Appl. Phys. (1993)
10.1143/JJAP.34.196 / Jpn. J. Appl. Phys. (1995)
10.1143/JJAP.32.4061 / Jpn. J. Appl. Phys. (1993)
10.1080/10584589408018661 / Integrat. Ferroelectr. (1994)
{'key': '2024020217475094300_r11'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:35 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 2:05 p.m.)
Indexed	7 months, 4 weeks ago (Dec. 30, 2024, 1:07 p.m.)
Issued	28 years, 9 months ago (Nov. 15, 1996)
Published	28 years, 9 months ago (Nov. 15, 1996)
Published Print	28 years, 9 months ago (Nov. 15, 1996)

Funders 0

None

BibTeX

@article{Lee_1996, title={Microstructure dependence of electrical properties of (Ba0.5Sr0.5)TiO3 thin films deposited on Pt/SiO2/Si}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363583}, DOI={10.1063/1.363583}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lee, Won-Jae and Kim, Ho-Gi and Yoon, Soon-Gil}, year={1996}, month=nov, pages={5891–5894} }

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