DOI: 10.1063/1.363407. B-doped fully strained Si1−<i>x</i>Ge<i>x</i> layers grown on Si(001) by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties

B-doped fully strained Si1−xGex layers grown on Si(001) by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties

10.1063/1.363407

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

B-doped Si1−xGex layers with Ge fractions, determined by Rutherford backscattering spectroscopy, ranging from 0 to 0.28 and B concentrations, from quantitative secondary-ion spectroscopy measurements, between 5×1016 and 4×1019 cm−3 were grown on Si(001) at temperatures Ts=475–575 °C by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6. Film thicknesses ranged from 200 nm for alloys with x=0.28 to 800 nm with x=0.05 to 1.4 μm for Si. Structural analyses by high-resolution x-ray diffraction and reciprocal lattice mapping combined with transmission electron microscopy showed that all films were fully strained, with measured relaxations of only ≂4×10−5, and exhibited no evidence of dislocations or other extended defects. The hole conductivity mobility μc,h in these layers increased continuously with increasing Ge concentrations, whereas the Hall mobility decreased yielding a Hall scattering factor that ranged from 0.75 for Si to 0.26 for Si0.72Ge0.28 but was not strongly affected by B concentration. μc,h, with CB=2×1018 cm−3, varied from 110 cm2 V−1 s−1 for Si0.95Ge0.05 to 158 cm2 V−1 s−1 for Si0.72Ge0.28, compared to 86 cm2 V−1 s−1 for Si, in good agreement with Boltzmann transport model calculations accounting for changes in the valence-band structure due to the effects of both alloying and biaxial in-plane compressional strain.

Bibliography

Lu, Q., Sardela, M. R., Bramblett, T. R., & Greene, J. E. (1996). B-doped fully strained Si1âxGex layers grown on Si(001) by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties. Journal of Applied Physics, 80(8), 4458â4466.

Authors 4

Q. Lu (first)
M. R. Sardela (additional)
T. R. Bramblett (additional)
J. E. Greene (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:39 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 2:01 p.m.)
Indexed	2 months ago (June 24, 2025, 7:28 a.m.)
Issued	28 years, 10 months ago (Oct. 15, 1996)
Published	28 years, 10 months ago (Oct. 15, 1996)
Published Print	28 years, 10 months ago (Oct. 15, 1996)

Funders 0

None

BibTeX

@article{Lu_1996, title={B-doped fully strained Si1−xGex layers grown on Si(001) by gas-source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363407}, DOI={10.1063/1.363407}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lu, Q. and Sardela, M. R. and Bramblett, T. R. and Greene, J. E.}, year={1996}, month=oct, pages={4458–4466} }

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