DOI: 10.1063/1.363302. Growth of <i>c</i>-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique

Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique

10.1063/1.363302

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Gallium nitride (GaN) thin films with a wurtzite structure were grown on fused silica (FS) substrates by pulsed laser ablation of a liquid gallium target in the presence of ammonia gas. X-ray diffraction measurement shows a single c-axis orientation for the GaN film grown with a thin (&lt;1000 Å) zinc oxide (ZnO) film as an alignment layer. There is a great improvement in the surface morphology as well as optical transmission for the GaN film grown on the ZnO buffered FS substrate. The energy band gap obtained from the absorption spectrum is about 3.45 eV.

Bibliography

Xiao, R. F., Liao, H. B., Cue, N., Sun, X. W., & Kwok, H. S. (1996). Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique. Journal of Applied Physics, 80(7), 4226â4228.

Authors 5

R. F. Xiao (first)
H. B. Liao (additional)
N. Cue (additional)
X. W. Sun (additional)
H. S. Kwok (additional)

References 15 Referenced 71

{'key': '2024020217380046200_r1'}
{'key': '2024020217380046200_r2'}
10.1143/JJAP.34.1332 / Jpn. J. Appl. Phys. Lett. (1995)
10.1063/1.114717 / Appl. Phys. Lett. (1995)
10.1063/1.114852 / Appl. Phys. Lett. (1995)
{'key': '2024020217380046200_r6'}
10.1007/BF02655831 / J. Electron. Mater. (1992)
10.1116/1.585897 / J. Vac. Sci. Technol. B (1992)
10.1063/1.108110 / Appl. Phys-.Lett. (1992)
10.1016/0022-0248(92)90496-6 / J. Cryst. Growth (1992)
10.1116/1.579995 / J. Vac. Sci. Technol. A (1996)
10.1103/PhysRev.95.559 / Phys. Rev. (1954)
10.1063/1.336906 / J. Appl. Phys. (1986)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:52 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 1:57 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 5:23 p.m.)
Issued	28 years, 11 months ago (Oct. 1, 1996)
Published	28 years, 11 months ago (Oct. 1, 1996)
Published Print	28 years, 11 months ago (Oct. 1, 1996)

Funders 0

None

BibTeX

@article{Xiao_1996, title={Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363302}, DOI={10.1063/1.363302}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Xiao, R. F. and Liao, H. B. and Cue, N. and Sun, X. W. and Kwok, H. S.}, year={1996}, month=oct, pages={4226–4228} }

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