Abstract
A novel multi-bit dual pseudo spin valve with perpendicular magnetic anisotropy is investigated for spin transfer torque (STT) switching. The structure consists of two free layers and one reference layer, and all are based on Co/Pd multilayer. STT switching of the multi-bit device shows distinct four resistance levels. The selection of intrinsic properties of each ferromagnetic layer can be controlled for distinct separation of the resistance levels as well as the respective STT switching current. Reversible transitions between different states can be achieved by a pulsed current, in which its critical value is found to be linearly dependent on pulse duration.
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Dates
Type | When |
---|---|
Created | 14 years ago (Aug. 30, 2011, 6:34 p.m.) |
Deposited | 2 years ago (Aug. 4, 2023, 10:54 p.m.) |
Indexed | 4 weeks, 1 day ago (Aug. 6, 2025, 9:47 a.m.) |
Issued | 14 years ago (Aug. 29, 2011) |
Published | 14 years ago (Aug. 29, 2011) |
Published Online | 14 years ago (Aug. 30, 2011) |
Published Print | 14 years ago (Aug. 29, 2011) |
@article{Sbiaa_2011, title={Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3632075}, DOI={10.1063/1.3632075}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sbiaa, R. and Law, R. and Lua, S. Y. H. and Tan, E. L. and Tahmasebi, T. and Wang, C. C. and Piramanayagam, S. N.}, year={2011}, month=aug }