DOI: 10.1063/1.363084. Theoretical modeling of long wavelength <i>n</i>+-on-<i>p</i> HgCdTe photodiodes

Theoretical modeling of long wavelength n+-on-p HgCdTe photodiodes

10.1063/1.363084

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The performance of long wavelength infrared high quality n+-on-p HgCdTe photodiodes is reexamined theoretically. It is shown that the performance can be explained taking into account only thermal generation governed by the Auger mechanism. The investigations are carried out for photodiodes operated in a temperature range between 300 and 50 K. The effect of doping profiles on the photodiode parameters (R0A product, I–V characteristic, photoelectrical gain and noise) is solved by forward-condition steady-state analysis. The theoretical predictions of photodiode parameters are compared with experimental data obtained at the Laboratoire d’Electronique de Technologie et d’Instrumentation (Grenoble, France). Excellent agreement between both types of results has been achieved.

Bibliography

Rogalski, A., & Ciupa, R. (1996). Theoretical modeling of long wavelength n+-on-p HgCdTe photodiodes. Journal of Applied Physics, 80(4), 2483â2489.

Authors 2

A. Rogalski (first)
R. Ciupa (additional)

References 37 Referenced 9

{'key': '2024020217284086500_r1'}
10.1016/0038-1098(80)90736-X / Solid State Commun. (1980)
10.1063/1.328426 / J. Appl. Phys. (1981)
10.1063/1.342925 / J. Appl. Phys. (1989)
10.1088/0268-1242/5/3S/011 / Semicon. Sci. Technol. (1990)
10.1116/1.585409 / J. Vac. Sci. Technol. B (1991)
10.1063/1.348741 / J. Appl. Phys. (1991)
10.1116/1.585406 / J. Vac. Sci. Technol. B (1991)
10.1063/1.108538 / Appl. Phys. Lett. (1993)
10.1088/0268-1242/8/6S/003 / Semicon. Sci. Technol. (1993)
10.1117/12.165818 / Opt. Eng. (1994)
{'key': '2024020217284086500_r12', 'first-page': '463', 'volume': '6', 'year': '1992', 'journal-title': 'Infrared Phys.'} / Infrared Phys. (1992)
10.1063/1.358644 / J. Appl. Phys. (1995)
10.1007/BF02817520 / J. Electr. Mater. (1993)
{'key': '2024020217284086500_r15'}
10.1063/1.331516 / J. Appl. Phys. (1982)
{'key': '2024020217284086500_r17', 'first-page': '55', 'volume': '18', 'year': '1985', 'journal-title': 'Electron Tech.'} / Electron Tech. (1985)
10.1016/0020-0891(88)90002-4 / Infrared Phys. (1988)
10.1016/0079-6727(88)90001-8 / Prog. Quant. Electr. (1988)
10.1016/0020-0891(91)90041-D / Infrared Phys. (1991)
10.1063/1.337014 / J. Appl. Phys. (1986)
{'key': '2024020217284086500_r22'}
10.1002/j.1538-7305.1950.tb03653.x / Bell. Syst. Tech. J. (1950)
10.1016/0020-0891(93)90112-K / Infrared Phys. (1993)
10.1088/0268-1242/8/6S/005 / Semicon. Sci. Technol. (1993)
10.1016/0020-0891(83)90031-3 / Infrared Phys. (1983)
10.1016/0020-0891(86)90054-0 / Infrared Phys. (1986)
10.1103/PhysRev.94.1558 / Phys. Rev. (1954)
10.1016/0020-0891(86)90008-4 / Infrared Phys. (1986)
10.1088/0268-1242/5/3S/008 / Semicon. Sci. Technol. (1990)
{'key': '2024020217284086500_r31'}
{'key': '2024020217284086500_r32'}
10.1016/0020-0891(85)90040-5 / Infrared Phys. (1985)
{'key': '2024020217284086500_r34'}
10.1016/0022-0248(90)90799-Q / J. Cryst. Growth (1988)
10.1016/0022-0248(90)90798-P / J. Cryst. Growth (1988)
10.1016/0020-0891(91)90141-2 / Infrared Phys. (1991)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:50 p.m.)
Indexed	1 year, 6 months ago (Feb. 6, 2024, 3:23 p.m.)
Issued	29 years ago (Aug. 15, 1996)
Published	29 years ago (Aug. 15, 1996)
Published Print	29 years ago (Aug. 15, 1996)

Funders 0

None

BibTeX

@article{Rogalski_1996, title={Theoretical modeling of long wavelength n+-on-p HgCdTe photodiodes}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.363084}, DOI={10.1063/1.363084}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rogalski, A. and Ciupa, R.}, year={1996}, month=aug, pages={2483–2489} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        6
      ]
    ],
    "date-time": "2024-02-06T20:23:40Z",
    "timestamp": 1707251020020
  },
  "reference-count": 37,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        8,
        15
      ]
    ]
  },
  "abstract": "<jats:p>The performance of long wavelength infrared high quality n+-on-p HgCdTe photodiodes is reexamined theoretically. It is shown that the performance can be explained taking into account only thermal generation governed by the Auger mechanism. The investigations are carried out for photodiodes operated in a temperature range between 300 and 50 K. The effect of doping profiles on the photodiode parameters (R0A product, I\u2013V characteristic, photoelectrical gain and noise) is solved by forward-condition steady-state analysis. The theoretical predictions of photodiode parameters are compared with experimental data obtained at the\u2008Laboratoire\u2008d\u2019Electronique\u2008de\u2008Technologie\u2008et\u2008d\u2019Instrumentation (Grenoble, France). Excellent agreement between both types of results has been achieved.</jats:p>",
  "DOI": "10.1063/1.363084",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:31:13Z",
    "timestamp": 1027686673000
  },
  "page": "2483-2489",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 9,
  "title": "Theoretical modeling of long wavelength <i>n</i>+-on-<i>p</i> HgCdTe photodiodes",
  "prefix": "10.1063",
  "volume": "80",
  "author": [
    {
      "given": "A.",
      "family": "Rogalski",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Institute of Technical Physics, Military University of Technology, 01-489 Warsaw 49, Poland"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Ciupa",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute of Technical Physics, Military University of Technology, 01-489 Warsaw 49, Poland"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020217284086500_r1"
    },
    {
      "key": "2024020217284086500_r2",
      "doi-asserted-by": "crossref",
      "first-page": "615",
      "DOI": "10.1016/0038-1098(80)90736-X",
      "volume": "33",
      "year": "1980",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2024020217284086500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "848",
      "DOI": "10.1063/1.328426",
      "volume": "52",
      "year": "1981",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217284086500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1747",
      "DOI": "10.1063/1.342925",
      "volume": "65",
      "year": "1989",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217284086500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "S45",
      "DOI": "10.1088/0268-1242/5/3S/011",
      "volume": "5",
      "year": "1990",
      "journal-title": "Semicon. Sci. Technol."
    },
    {
      "key": "2024020217284086500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1740",
      "DOI": "10.1116/1.585409",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020217284086500_r7",
      "doi-asserted-by": "crossref",
      "first-page": "2143",
      "DOI": "10.1063/1.348741",
      "volume": "69",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217284086500_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1724",
      "DOI": "10.1116/1.585406",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020217284086500_r9",
      "doi-asserted-by": "crossref",
      "first-page": "976",
      "DOI": "10.1063/1.108538",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217284086500_r10",
      "doi-asserted-by": "crossref",
      "first-page": "788",
      "DOI": "10.1088/0268-1242/8/6S/003",
      "volume": "8",
      "year": "1993",
      "journal-title": "Semicon. Sci. Technol."
    },
    {
      "key": "2024020217284086500_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1422",
      "DOI": "10.1117/12.165818",
      "volume": "33",
      "year": "1994",
      "journal-title": "Opt. Eng."
    },
    {
      "key": "2024020217284086500_r12",
      "first-page": "463",
      "volume": "6",
      "year": "1992",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r13",
      "doi-asserted-by": "crossref",
      "first-page": "3505",
      "DOI": "10.1063/1.358644",
      "volume": "77",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217284086500_r14",
      "doi-asserted-by": "crossref",
      "first-page": "1027",
      "DOI": "10.1007/BF02817520",
      "volume": "22",
      "year": "1993",
      "journal-title": "J. Electr. Mater."
    },
    {
      "key": "2024020217284086500_r15"
    },
    {
      "key": "2024020217284086500_r16",
      "doi-asserted-by": "crossref",
      "first-page": "6430",
      "DOI": "10.1063/1.331516",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217284086500_r17",
      "first-page": "55",
      "volume": "18",
      "year": "1985",
      "journal-title": "Electron Tech."
    },
    {
      "key": "2024020217284086500_r18",
      "doi-asserted-by": "crossref",
      "first-page": "139",
      "DOI": "10.1016/0020-0891(88)90002-4",
      "volume": "28",
      "year": "1988",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r19",
      "doi-asserted-by": "crossref",
      "first-page": "87",
      "DOI": "10.1016/0079-6727(88)90001-8",
      "volume": "12",
      "year": "1988",
      "journal-title": "Prog. Quant. Electr."
    },
    {
      "key": "2024020217284086500_r20",
      "doi-asserted-by": "crossref",
      "first-page": "69",
      "DOI": "10.1016/0020-0891(91)90041-D",
      "volume": "31",
      "year": "1991",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r21",
      "doi-asserted-by": "crossref",
      "first-page": "2457",
      "DOI": "10.1063/1.337014",
      "volume": "59",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217284086500_r22"
    },
    {
      "key": "2024020217284086500_r23",
      "doi-asserted-by": "crossref",
      "first-page": "560",
      "DOI": "10.1002/j.1538-7305.1950.tb03653.x",
      "volume": "29",
      "year": "1950",
      "journal-title": "Bell. Syst. Tech. J."
    },
    {
      "key": "2024020217284086500_r24",
      "doi-asserted-by": "crossref",
      "first-page": "565",
      "DOI": "10.1016/0020-0891(93)90112-K",
      "volume": "34",
      "year": "1993",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r25",
      "doi-asserted-by": "crossref",
      "first-page": "824",
      "DOI": "10.1088/0268-1242/8/6S/005",
      "volume": "8",
      "year": "1993",
      "journal-title": "Semicon. Sci. Technol."
    },
    {
      "key": "2024020217284086500_r26",
      "doi-asserted-by": "crossref",
      "first-page": "171",
      "DOI": "10.1016/0020-0891(83)90031-3",
      "volume": "23",
      "year": "1983",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r27",
      "doi-asserted-by": "crossref",
      "first-page": "337",
      "DOI": "10.1016/0020-0891(86)90054-0",
      "volume": "26",
      "year": "1986",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r28",
      "doi-asserted-by": "crossref",
      "first-page": "1558",
      "DOI": "10.1103/PhysRev.94.1558",
      "volume": "94",
      "year": "1954",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020217284086500_r29",
      "doi-asserted-by": "crossref",
      "first-page": "303",
      "DOI": "10.1016/0020-0891(86)90008-4",
      "volume": "26",
      "year": "1986",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r30",
      "doi-asserted-by": "crossref",
      "first-page": "S30",
      "DOI": "10.1088/0268-1242/5/3S/008",
      "volume": "5",
      "year": "1990",
      "journal-title": "Semicon. Sci. Technol."
    },
    {
      "key": "2024020217284086500_r31"
    },
    {
      "key": "2024020217284086500_r32"
    },
    {
      "key": "2024020217284086500_r33",
      "doi-asserted-by": "crossref",
      "first-page": "729",
      "DOI": "10.1016/0020-0891(85)90040-5",
      "volume": "25",
      "year": "1985",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020217284086500_r34"
    },
    {
      "key": "2024020217284086500_r35",
      "doi-asserted-by": "crossref",
      "first-page": "723",
      "DOI": "10.1016/0022-0248(90)90799-Q",
      "volume": "86",
      "year": "1988",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020217284086500_r36",
      "doi-asserted-by": "crossref",
      "first-page": "700",
      "DOI": "10.1016/0022-0248(90)90798-P",
      "volume": "86",
      "year": "1988",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020217284086500_r37",
      "doi-asserted-by": "crossref",
      "first-page": "543",
      "DOI": "10.1016/0020-0891(91)90141-2",
      "volume": "31",
      "year": "1991",
      "journal-title": "Infrared Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/80/4/2483/18687114/2483_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/80/4/2483/18687114/2483_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T18:50:15Z",
    "timestamp": 1706899815000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/80/4/2483/2570/Theoretical-modeling-of-long-wavelength-n-on-p"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        8,
        15
      ]
    ]
  },
  "references-count": 37,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1996,
          8,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.363084",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        8,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        8,
        15
      ]
    ]
  }
}