DOI: 10.1063/1.3630227. Charge transfer hysteresis in graphene dual-dielectric memory cell structures

Charge transfer hysteresis in graphene dual-dielectric memory cell structures

10.1063/1.3630227

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report controlled charge transfer between large-area graphene and a dual-dielectric, silicon nitride/silicon oxide substrate. Graphene was grown on copper by chemical vapour deposition, transferred to the nitride substrates, and patterned into test structures. Hysteresis in conductance with varying gate voltage is easily understood in terms of electron transfer between graphene and nitride traps. Increased hysteresis with temperature suggests thermally activated charge transfer of a Poole-Frenkel or Schottky nature. A 7.3× change in graphene sheet resistance is observed at room temperature with the nitride in a charged and discharged state.

Bibliography

Imam, S. A., Deshpande, T., Guermoune, A., Siaj, M., & Szkopek, T. (2011). Charge transfer hysteresis in graphene dual-dielectric memory cell structures. Applied Physics Letters, 99(8).

Authors 5

S. A. Imam (first)
T. Deshpande (additional)
A. Guermoune (additional)
M. Siaj (additional)
T. Szkopek (additional)

References 16 Referenced 34

10.1063/1.3473815 / Appl. Phys. Lett. (2010)
10.1021/nn101950n / ACS Nano (2010)
10.1063/1.3273396 / Appl. Phys. Lett. (2009)
10.1021/nl903162a / Nano Lett. (2010)
10.1021/nl103015w / Nano Lett. (2011)
10.1063/1.3119215 / Appl. Phys. Lett. (2009)
10.1103/PhysRevLett.105.166602 / Phys. Rev. Lett. (2010)
10.1063/1.1658181 / J. Appl. Phys. (1969)
10.1016/j.carbon.2011.05.054 / Carbon (2011)
10.1063/1.2776887 / Appl. Phys. Lett. (2007)
10.1103/PhysRevB.79.075428 / Phys. Rev. B (2009)
10.1038/nnano.2011.6 / Nat. Nanotechnol. (2011)
10.1063/1.337842 / J. Appl. Phys. (1987)
10.1063/1.101558 / Appl. Phys. Lett. (1989)
10.1063/1.371195 / J. Appl. Phys. (1999)
{'volume-title': 'Nanoscale Transistors: Device Physics, Modeling and Simulation', 'year': '2005', 'key': '2023062418543676400_c16'} / Nanoscale Transistors: Device Physics, Modeling and Simulation (2005)

Dates

Type	When
Created	14 years ago (Aug. 25, 2011, 6:50 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 11:27 p.m.)
Indexed	2 weeks, 6 days ago (Aug. 7, 2025, 4:30 p.m.)
Issued	14 years ago (Aug. 22, 2011)
Published	14 years ago (Aug. 22, 2011)
Published Online	14 years ago (Aug. 25, 2011)
Published Print	14 years ago (Aug. 22, 2011)

Funders 0

None

BibTeX

@article{Imam_2011, title={Charge transfer hysteresis in graphene dual-dielectric memory cell structures}, volume={99}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3630227}, DOI={10.1063/1.3630227}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Imam, S. A. and Deshpande, T. and Guermoune, A. and Siaj, M. and Szkopek, T.}, year={2011}, month=aug }

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