DOI: 10.1063/1.362821. Anode hole injection and trapping in silicon dioxide

Anode hole injection and trapping in silicon dioxide

10.1063/1.362821

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Hole injection into silicon dioxide films from the polycrystalline-silicon anode or from the anode/oxide interface is demonstrated to unequivocally occur for any case where electrons are present in the oxide conduction band and where the average electric field in the oxide exceeds 5 MV/cm (thick-film limit) or the voltage drop across the oxide layer is at least 8 V (thin-film limit). The hole generation is directly shown to be related to the appearance of hot electrons with kinetic energies greater than 5 eV in the oxide conduction band near the anode region. Monte Carlo simulations confirm that the electron energy distribution at the anode is the controlling variable and that hot hole injection occurs mostly over the anode/oxide energy barrier.

Bibliography

DiMaria, D. J., Cartier, E., & Buchanan, D. A. (1996). Anode hole injection and trapping in silicon dioxide. Journal of Applied Physics, 80(1), 304â317.

Authors 3

D. J. DiMaria (first)
E. Cartier (additional)
D. A. Buchanan (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:33 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 1:24 p.m.)
Indexed	3 weeks ago (Aug. 7, 2025, 4:39 p.m.)
Issued	29 years, 1 month ago (July 1, 1996)
Published	29 years, 1 month ago (July 1, 1996)
Published Print	29 years, 1 month ago (July 1, 1996)

Funders 0

None

BibTeX

@article{DiMaria_1996, title={Anode hole injection and trapping in silicon dioxide}, volume={80}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.362821}, DOI={10.1063/1.362821}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={DiMaria, D. J. and Cartier, E. and Buchanan, D. A.}, year={1996}, month=jul, pages={304–317} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        7
      ]
    ],
    "date-time": "2025-08-07T20:39:42Z",
    "timestamp": 1754599182261
  },
  "reference-count": 66,
  "publisher": "AIP Publishing",
  "issue": "1",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1996,
        7,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Hole injection into silicon dioxide films from the polycrystalline-silicon anode or from the anode/oxide interface is demonstrated to unequivocally occur for any case where electrons are present in the oxide conduction band and where the average electric field in the oxide exceeds 5 MV/cm (thick-film limit) or the voltage drop across the oxide layer is at least 8 V (thin-film limit). The hole generation is directly shown to be related to the appearance of hot electrons with kinetic energies greater than 5 eV in the oxide conduction band near the anode region. Monte Carlo simulations confirm that the electron energy distribution at the anode is the controlling variable and that hot hole injection occurs mostly over the anode/oxide energy barrier.</jats:p>",
  "DOI": "10.1063/1.362821",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:33:37Z",
    "timestamp": 1027686817000
  },
  "page": "304-317",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 187,
  "title": "Anode hole injection and trapping in silicon dioxide",
  "prefix": "10.1063",
  "volume": "80",
  "author": [
    {
      "given": "D. J.",
      "family": "DiMaria",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "E.",
      "family": "Cartier",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "D. A.",
      "family": "Buchanan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020217121588000_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2099",
      "DOI": "10.1103/PhysRevB.31.2099",
      "volume": "31",
      "year": "1985",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020217121588000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "418",
      "DOI": "10.1063/1.334767",
      "volume": "57",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1947",
      "DOI": "10.1063/1.338043",
      "volume": "61",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r4",
      "doi-asserted-by": "crossref",
      "first-page": "5795",
      "DOI": "10.1063/1.358479",
      "volume": "76",
      "year": "1994",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r5",
      "doi-asserted-by": "crossref",
      "first-page": "443",
      "DOI": "10.1063/1.334771",
      "volume": "57",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r6",
      "doi-asserted-by": "crossref",
      "first-page": "824",
      "DOI": "10.1063/1.336605",
      "volume": "59",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r7",
      "doi-asserted-by": "crossref",
      "first-page": "669",
      "DOI": "10.1063/1.97563",
      "volume": "49",
      "year": "1986",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217121588000_r8",
      "doi-asserted-by": "crossref",
      "first-page": "761",
      "DOI": "10.1109/16.285029",
      "volume": "41",
      "year": "1994",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020217121588000_r9",
      "doi-asserted-by": "crossref",
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      "volume": "76",
      "year": "1994",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r10",
      "doi-asserted-by": "crossref",
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      "volume": "66",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217121588000_r11",
      "doi-asserted-by": "crossref",
      "first-page": "546",
      "DOI": "10.1143/JJAP.33.546",
      "volume": "33",
      "year": "1994",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r12",
      "doi-asserted-by": "crossref",
      "first-page": "3277",
      "DOI": "10.1063/1.358681",
      "volume": "77",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r13"
    },
    {
      "key": "2024020217121588000_r14"
    },
    {
      "key": "2024020217121588000_r15",
      "doi-asserted-by": "crossref",
      "first-page": "3203",
      "DOI": "10.1063/1.323116",
      "volume": "47",
      "year": "1976",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r16",
      "doi-asserted-by": "crossref",
      "first-page": "1214",
      "DOI": "10.1063/1.334518",
      "volume": "57",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1302",
      "DOI": "10.1063/1.336098",
      "volume": "58",
      "year": "1985",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r18",
      "doi-asserted-by": "crossref",
      "first-page": "8124",
      "DOI": "10.1103/PhysRevB.31.8124",
      "volume": "31",
      "year": "1985",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020217121588000_r19",
      "doi-asserted-by": "crossref",
      "first-page": "1719",
      "DOI": "10.1063/1.337264",
      "volume": "60",
      "year": "1986",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r20",
      "doi-asserted-by": "crossref",
      "first-page": "1284",
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      "volume": "56",
      "year": "1986",
      "journal-title": "Phys. Rev. Lett."
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      "doi-asserted-by": "crossref",
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      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
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      "doi-asserted-by": "crossref",
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      "volume": "56",
      "year": "1986",
      "journal-title": "Phys. Rev. Lett."
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      "doi-asserted-by": "crossref",
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      "volume": "64",
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      "volume": "68",
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      "year": "1995",
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      "doi-asserted-by": "crossref",
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      "volume": "28",
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      "journal-title": "Microelectron. Eng."
    },
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      "doi-asserted-by": "crossref",
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      "volume": "49",
      "year": "1994",
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      "doi-asserted-by": "crossref",
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      "key": "2024020217121588000_r52",
      "doi-asserted-by": "crossref",
      "first-page": "2540",
      "DOI": "10.1063/1.332323",
      "volume": "54",
      "year": "1983",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r53",
      "doi-asserted-by": "crossref",
      "first-page": "7439",
      "DOI": "10.1063/1.344534",
      "volume": "67",
      "year": "1990",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r54",
      "doi-asserted-by": "crossref",
      "first-page": "1471",
      "DOI": "10.1103/PhysRevB.43.1471",
      "volume": "43",
      "year": "1991",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020217121588000_r55"
    },
    {
      "key": "2024020217121588000_r56"
    },
    {
      "key": "2024020217121588000_r57",
      "doi-asserted-by": "crossref",
      "first-page": "184",
      "DOI": "10.1109/55.382234",
      "volume": "16",
      "year": "1995",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020217121588000_r58"
    },
    {
      "key": "2024020217121588000_r59",
      "doi-asserted-by": "crossref",
      "first-page": "5665",
      "DOI": "10.1063/1.329502",
      "volume": "52",
      "year": "1981",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020217121588000_r60",
      "doi-asserted-by": "crossref",
      "first-page": "939",
      "DOI": "10.1016/0038-1101(87)90130-4",
      "volume": "30",
      "year": "1987",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020217121588000_r61",
      "doi-asserted-by": "crossref",
      "first-page": "489",
      "DOI": "10.1002/pssa.2210260211",
      "volume": "26",
      "year": "1974",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020217121588000_r62"
    },
    {
      "key": "2024020217121588000_r63",
      "first-page": "2128",
      "volume": "NS-24",
      "year": "1976",
      "journal-title": "IEEE Trans. Nucl. Sci."
    },
    {
      "key": "2024020217121588000_r64",
      "doi-asserted-by": "crossref",
      "first-page": "861",
      "DOI": "10.1063/1.94529",
      "volume": "43",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217121588000_r65",
      "doi-asserted-by": "crossref",
      "first-page": "1809",
      "DOI": "10.1063/1.111789",
      "volume": "64",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020217121588000_r66",
      "doi-asserted-by": "crossref",
      "first-page": "3883",
      "DOI": "10.1063/1.359905",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/80/1/304/18686031/304_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/80/1/304/18686031/304_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T18:24:00Z",
    "timestamp": 1706898240000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/80/1/304/490821/Anode-hole-injection-and-trapping-in-silicon"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1996,
        7,
        1
      ]
    ]
  },
  "references-count": 66,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          1996,
          7,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.362821",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1996,
        7,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1996,
        7,
        1
      ]
    ]
  }
}