Abstract
Ba-ferrite (BaM) thin films were prepared by both a facing targets sputtering (FTS) system and dc magnetron sputtering (DCMS) at room temperature. They were successively annealed to crystallize. The films prepared by FTS system were crystallized at 650 °C, while those prepared by DCMS system were crystallized at 700 °C. Saturation magnetization, coercivity, and squareness ratio of the films prepared by FTS are 210 emu/cc, 3.3 kOe, and 0.7 in perpendicular direction, respectively, after the annealing at 650 °C. It was found that oxidized Fe is partially reduced to metallic Fe by high-temperature annealing.
References
6
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:50 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 12:37 p.m.) |
Indexed | 5 days, 23 hours ago (Aug. 29, 2025, 6:24 a.m.) |
Issued | 29 years, 4 months ago (April 15, 1996) |
Published | 29 years, 4 months ago (April 15, 1996) |
Published Print | 29 years, 4 months ago (April 15, 1996) |
@article{Morisako_1996, title={Sputtered hexagonal Ba-ferrite films for high-density magnetic recording media}, volume={79}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.361639}, DOI={10.1063/1.361639}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Morisako, Akimitsu and Matsumoto, Mitsunori and Naoe, Masahiko}, year={1996}, month=apr, pages={4881–4883} }