Abstract
Optical emission spectra (OES) from CH4/N2 rf plasmas, which are used for the deposition of nitrogen-containing hydrogenated amorphous carbon (a-C:H:N) thin films, have been characterized. Previously unidentified spectral lines have been assigned to atomic N. Further identified species include CH, H, H2, N2, N+2, N, and CN. Variations between spectra from the pure CH4 or N2 plasmas and the mixed CH4/N2 plasma are discussed. The enhancement of excited nitrogen species, with the addition CH4, is attributed to Penning ionization. The observed OES variations of the CH4/N2 plasma with power, pressure, and CH4/N2 ratio are explained in terms of possible reaction mechanisms and their activation, and correlated with preliminary film growth characteristics.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:50 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 2, 2024, 1:10 p.m.) |
Indexed | 1 month ago (Aug. 2, 2025, 12:32 a.m.) |
Issued | 29 years, 4 months ago (May 1, 1996) |
Published | 29 years, 4 months ago (May 1, 1996) |
Published Print | 29 years, 4 months ago (May 1, 1996) |
@article{Clay_1996, title={Characterization of a-C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopy}, volume={79}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.361439}, DOI={10.1063/1.361439}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Clay, K. J. and Speakman, S. P. and Amaratunga, G. A. J. and Silva, S. R. P.}, year={1996}, month=may, pages={7227–7233} }