DOI: 10.1063/1.360603. The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon

The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon

10.1063/1.360603

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Recently, octahedron structures have been found in the Czochralski-silicon substrate surface layer just under the oxide defects. An attempt is made to characterize these structures by analysis with transmission electron microscopy and energy-dispersive x-ray spectroscopy. Several results indicate that the structure is full of vacancies. This is contrary to previously reported results suggesting that the octahedron structures found in Si bulk are filled with amorphous SiO2. A model for the formation of an octahedron structure with many vacancies is proposed.

Bibliography

Itsumi, M., Akiya, H., Ueki, T., Tomita, M., & Yamawaki, M. (1995). The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon. Journal of Applied Physics, 78(10), 5984â5988.

Authors 5

Manabu Itsumi (first)
Hideo Akiya (additional)
Takemi Ueki (additional)
Masato Tomita (additional)
Masataka Yamawaki (additional)

References 30 Referenced 94

{'key': '2024020215382210800_r1'}
{'key': '2024020215382210800_r2'}
10.1063/1.93155 / Appl. Phys. Lett. (1982)
{'key': '2024020215382210800_r4', 'first-page': '25', 'volume': '49', 'year': '1982', 'journal-title': 'Oki Denki Kenkyu Kaihatu'} / Oki Denki Kenkyu Kaihatu (1982)
{'key': '2024020215382210800_r5', 'first-page': '1', 'volume': '83–66', 'year': '1983', 'journal-title': 'Gijutsu Kenkyu Houkoku SSD'} / Gijutsu Kenkyu Houkoku SSD (1983)
{'key': '2024020215382210800_r6'}
10.1063/1.351609 / J. Appl. Phys. (1992)
10.1016/0022-0248(82)90070-7 / J. Cryst. Growth (1982)
{'key': '2024020215382210800_r9', 'first-page': '79', 'volume': '82–103', 'year': '1982', 'journal-title': 'Gijutsu Kenkyu Houkoku SSD'} / Gijutsu Kenkyu Houkoku SSD (1982)
{'key': '2024020215382210800_r10'}
10.1143/JJAP.29.L1947 / Jpn. J. Appl. Phys. (1990)
10.1143/JJAP.31.L293 / Jpn. J. Appl. Phys. (1992)
10.1088/0268-1242/7/1/022 / Semicond. Sci. Technol. A (1992)
10.1557/PROC-262-815 / Mater. Res. Soc. Symp. Proc. (1992)
{'key': '2024020215382210800_r15'}
{'key': '2024020215382210800_r16'}
10.1143/JJAP.32.3675 / Jpn. J. Appl. Phys. (1993)
{'key': '2024020215382210800_r18'}
{'key': '2024020215382210800_r19'}
{'key': '2024020215382210800_r20'}
{'key': '2024020215382210800_r21'}
{'key': '2024020215382210800_r22'}
10.1149/1.2055142 / J. Electrochem. Soc. (1994)
{'key': '2024020215382210800_r24'}
10.1063/1.360232 / J. Appl. Phys. (1995)
{'key': '2024020215382210800_r26'}
10.1063/1.327419 / J. Appl. Phys. (1980)
10.1016/0022-0248(82)90474-2 / J. Cryst. Growth (1982)
10.1016/0022-0248(81)90518-2 / J. Cryst. Growth (1981)
10.1063/1.94232 / Appl. Phys. Lett. (1983)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:24 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11:51 a.m.)
Indexed	1 year, 2 months ago (June 18, 2024, 6:34 a.m.)
Issued	29 years, 9 months ago (Nov. 15, 1995)
Published	29 years, 9 months ago (Nov. 15, 1995)
Published Print	29 years, 9 months ago (Nov. 15, 1995)

Funders 0

None

BibTeX

@article{Itsumi_1995, title={The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon}, volume={78}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.360603}, DOI={10.1063/1.360603}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Itsumi, Manabu and Akiya, Hideo and Ueki, Takemi and Tomita, Masato and Yamawaki, Masataka}, year={1995}, month=nov, pages={5984–5988} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        6,
        18
      ]
    ],
    "date-time": "2024-06-18T10:34:23Z",
    "timestamp": 1718706863601
  },
  "reference-count": 30,
  "publisher": "AIP Publishing",
  "issue": "10",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1995,
        11,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Recently, octahedron structures have been found in the Czochralski-silicon substrate surface layer just under the oxide defects. An attempt is made to characterize these structures by analysis with transmission electron microscopy and energy-dispersive x-ray spectroscopy. Several results indicate that the structure is full of vacancies. This is contrary to previously reported results suggesting that the octahedron structures found in Si bulk are filled with amorphous SiO2. A model for the formation of an octahedron structure with many vacancies is proposed.</jats:p>",
  "DOI": "10.1063/1.360603",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:24:24Z",
    "timestamp": 1027689864000
  },
  "page": "5984-5988",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 94,
  "title": "The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon",
  "prefix": "10.1063",
  "volume": "78",
  "author": [
    {
      "given": "Manabu",
      "family": "Itsumi",
      "sequence": "first",
      "affiliation": [
        {
          "name": "LSI Laboratories, NTT, Atsugi-Shi, Kanagawa-ken 243-01, Japan"
        }
      ]
    },
    {
      "given": "Hideo",
      "family": "Akiya",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "LSI Laboratories, NTT, Atsugi-Shi, Kanagawa-ken 243-01, Japan"
        }
      ]
    },
    {
      "given": "Takemi",
      "family": "Ueki",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "LSI Laboratories, NTT, Atsugi-Shi, Kanagawa-ken 243-01, Japan"
        }
      ]
    },
    {
      "given": "Masato",
      "family": "Tomita",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Interdisciplinary Research Laboratories, NTT, Musashino-Shi, Tokyo 180, Japan"
        }
      ]
    },
    {
      "given": "Masataka",
      "family": "Yamawaki",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Interdisciplinary Research Laboratories, NTT, Musashino-Shi, Tokyo 180, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020215382210800_r1"
    },
    {
      "key": "2024020215382210800_r2"
    },
    {
      "key": "2024020215382210800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "496",
      "DOI": "10.1063/1.93155",
      "volume": "40",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020215382210800_r4",
      "first-page": "25",
      "volume": "49",
      "year": "1982",
      "journal-title": "Oki Denki Kenkyu Kaihatu"
    },
    {
      "key": "2024020215382210800_r5",
      "first-page": "1",
      "volume": "83\u201366",
      "year": "1983",
      "journal-title": "Gijutsu Kenkyu Houkoku SSD"
    },
    {
      "key": "2024020215382210800_r6"
    },
    {
      "key": "2024020215382210800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "2185",
      "DOI": "10.1063/1.351609",
      "volume": "72",
      "year": "1992",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020215382210800_r8",
      "doi-asserted-by": "crossref",
      "first-page": "535",
      "DOI": "10.1016/0022-0248(82)90070-7",
      "volume": "57",
      "year": "1982",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020215382210800_r9",
      "first-page": "79",
      "volume": "82\u2013103",
      "year": "1982",
      "journal-title": "Gijutsu Kenkyu Houkoku SSD"
    },
    {
      "key": "2024020215382210800_r10"
    },
    {
      "key": "2024020215382210800_r11",
      "doi-asserted-by": "crossref",
      "first-page": "L1947",
      "DOI": "10.1143/JJAP.29.L1947",
      "volume": "29",
      "year": "1990",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020215382210800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "L293",
      "DOI": "10.1143/JJAP.31.L293",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020215382210800_r13",
      "doi-asserted-by": "crossref",
      "first-page": "135",
      "DOI": "10.1088/0268-1242/7/1/022",
      "volume": "7",
      "year": "1992",
      "journal-title": "Semicond. Sci. Technol. A"
    },
    {
      "key": "2024020215382210800_r14",
      "doi-asserted-by": "crossref",
      "first-page": "815",
      "DOI": "10.1557/PROC-262-815",
      "volume": "262",
      "year": "1992",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020215382210800_r15"
    },
    {
      "key": "2024020215382210800_r16"
    },
    {
      "key": "2024020215382210800_r17",
      "doi-asserted-by": "crossref",
      "first-page": "3675",
      "DOI": "10.1143/JJAP.32.3675",
      "volume": "32",
      "year": "1993",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020215382210800_r18"
    },
    {
      "key": "2024020215382210800_r19"
    },
    {
      "key": "2024020215382210800_r20"
    },
    {
      "key": "2024020215382210800_r21"
    },
    {
      "key": "2024020215382210800_r22"
    },
    {
      "key": "2024020215382210800_r23",
      "doi-asserted-by": "crossref",
      "first-page": "2460",
      "DOI": "10.1149/1.2055142",
      "volume": "141",
      "year": "1994",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020215382210800_r24"
    },
    {
      "key": "2024020215382210800_r25",
      "doi-asserted-by": "crossref",
      "first-page": "1940",
      "DOI": "10.1063/1.360232",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020215382210800_r26"
    },
    {
      "key": "2024020215382210800_r27",
      "doi-asserted-by": "crossref",
      "first-page": "269",
      "DOI": "10.1063/1.327419",
      "volume": "51",
      "year": "1980",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020215382210800_r28",
      "doi-asserted-by": "crossref",
      "first-page": "516",
      "DOI": "10.1016/0022-0248(82)90474-2",
      "volume": "56",
      "year": "1982",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020215382210800_r29",
      "doi-asserted-by": "crossref",
      "first-page": "588",
      "DOI": "10.1016/0022-0248(81)90518-2",
      "volume": "54",
      "year": "1981",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020215382210800_r30",
      "doi-asserted-by": "crossref",
      "first-page": "1051",
      "DOI": "10.1063/1.94232",
      "volume": "43",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/78/10/5984/18679570/5984_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/78/10/5984/18679570/5984_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T16:51:01Z",
    "timestamp": 1706892661000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/78/10/5984/497544/The-composition-of-octahedron-structures-that-act"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1995,
        11,
        15
      ]
    ]
  },
  "references-count": 30,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          1995,
          11,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.360603",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1995,
        11,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1995,
        11,
        15
      ]
    ]
  }
}