Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O3](1−x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.

Bibliography

Wu, T., Bur, A., Wong, K., Zhao, P., Lynch, C. S., Amiri, P. K., Wang, K. L., & Carman, G. P. (2011). Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices. Applied Physics Letters, 98(26).

Authors 8
  1. Tao Wu (first)
  2. Alexandre Bur (additional)
  3. Kin Wong (additional)
  4. Ping Zhao (additional)
  5. Christopher S. Lynch (additional)
  6. Pedram Khalili Amiri (additional)
  7. Kang L. Wang (additional)
  8. Gregory P. Carman (additional)
References 18 Referenced 164
  1. 10.1109/JPROC.2008.2004313 / Proc IEEE (2008)
  2. 10.1038/nmat2189 / Nature Mat. (2008)
  3. 10.1063/1.2836410 / J. Appl. Phys. (2008)
  4. 10.1038/nmat1868 / Nature Mat. (2007)
  5. 10.1021/nl070465o / Nano Lett. (2007)
  6. 10.1038/nmat2184 / Nature Mat. (2008)
  7. 10.1002/adfm.200801907 / Adv. Funct. Mater. (2009)
  8. 10.1063/1.3354104 / J. Appl. Phys. (2010)
  9. 10.1063/1.3405722 / Appl. Phys. Lett. (2010)
  10. 10.1109/LMAG.2010.2100810 / IEEE Magn. Lett. (2011)
  11. 10.1063/1.3534788 / Appl. Phys. Lett. (2011)
  12. 10.1063/1.3563040 / J. Appl. Phys. (2011)
  13. 10.1103/PhysRevB.80.224416 / Phys. Rev. B (2009)
  14. 10.1063/1.3253706 / Appl. Phys. Lett. (2009)
  15. 10.1063/1.3595670 / J. Appl. Phys. (2011)
  16. {'key': '2023070315183282200_c16'}
  17. 10.1063/1.3592344 / J. Appl. Phys. (2011)
  18. {'volume-title': 'Introduction to Magnetic Materials', 'year': '2008', 'key': '2023070315183282200_c18'} / Introduction to Magnetic Materials (2008)
Dates
Type When
Created 14 years, 1 month ago (June 30, 2011, 7:58 p.m.)
Deposited 2 years, 1 month ago (July 3, 2023, 1:31 p.m.)
Indexed 3 weeks, 2 days ago (July 30, 2025, 6:56 a.m.)
Issued 14 years, 1 month ago (June 27, 2011)
Published 14 years, 1 month ago (June 27, 2011)
Published Online 14 years, 1 month ago (June 30, 2011)
Published Print 14 years, 1 month ago (June 27, 2011)
Funders 1
  1. Air Force Office of Scientific Research 10.13039/100000181

    Region: Americas

    gov (National government)

    Labels4
    1. AF Office of Scientific Research
    2. US Air Force Office of Scientific Research
    3. United States Air Force Office of Scientific Research
    4. AFOSR
    Awards1
    1. FA9550-09-1-0677

@article{Wu_2011, title={Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3605571}, DOI={10.1063/1.3605571}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, Tao and Bur, Alexandre and Wong, Kin and Zhao, Ping and Lynch, Christopher S. and Amiri, Pedram Khalili and Wang, Kang L. and Carman, Gregory P.}, year={2011}, month=jun }