DOI: 10.1063/1.360153. Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors

10.1063/1.360153

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The lattice heating rate has been calculated for GaAs field-effect transistors of different source-drain channel design by means of the ensemble Monte Carlo particle model. Transport of carriers in the substrate and the presence of free surface charges are also included in our simulation. The actual heat generation was obtained by accounting for the energy exchanged with the lattice of the semiconductor during phonon scattering. It was found that the maximum heating rate takes place below the surface near the drain end of the gate. The results correlate well with a previous hydrodynamic energy transport estimate of the electronic energy density, but shifted slightly more towards the drain. These results further emphasize the adverse effects of hot electrons on the Ohmic contacts.

Bibliography

Moglestue, C., Buot, F. A., & Anderson, W. T. (1995). Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors. Journal of Applied Physics, 78(4), 2343â2348.

Authors 3

C. Moglestue (first)
F. A. Buot (additional)
W. T. Anderson (additional)

References 10 Referenced 18

10.1002/qre.4680040309 / Quality and Reliability Engineering International (1988)
10.1063/1.334741 / J. Appl. Phys. (1985)
10.1063/1.350910 / J. Appl. Phys. (1992)
10.1109/T-ED.1977.18689 / IEEE Trans. Electron Devices (1977)
10.1016/0038-1101(84)90056-X / Solid-State Electron. (1984)
10.1016/0038-1101(84)90046-7 / Solid-State Electron. (1984)
10.1109/16.47785 / IEEE Trans. Electron Devices (1990)
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10.1016/0038-1101(79)90138-2 / Solid-State Electron. (1979)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11:20 a.m.)
Indexed	2 months, 3 weeks ago (June 6, 2025, 5:08 a.m.)
Issued	30 years ago (Aug. 15, 1995)
Published	30 years ago (Aug. 15, 1995)
Published Print	30 years ago (Aug. 15, 1995)

Funders 0

None

BibTeX

@article{Moglestue_1995, title={Ensemble Monte Carlo particle investigation of hot electron induced source-drain burnout characteristics of GaAs field-effect transistors}, volume={78}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.360153}, DOI={10.1063/1.360153}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Moglestue, C. and Buot, F. A. and Anderson, W. T.}, year={1995}, month=aug, pages={2343–2348} }

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