DOI: 10.1063/1.359843. Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices

Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices

10.1063/1.359843

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Nanocrystals of group-IV semiconductor materials (Si, Ge, and SiGe) have been fabricated in SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystals has been studied by transmission electron microscopy. Critical influences of the annealing temperatures and implantation doses on the nanocrystal size distributions are demonstrated with the Ge-implanted systems. Significant roughening of the nanocrystals occurs when the annealing temperature is raised above the melting temperature of the implanted semiconductor material.

Bibliography

Zhu, J. G., White, C. W., Budai, J. D., Withrow, S. P., & Chen, Y. (1995). Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices. Journal of Applied Physics, 78(7), 4386â4389.

Authors 5

Jane G. Zhu (first)
C.W. White (additional)
J. D. Budai (additional)
S. P. Withrow (additional)
Y. Chen (additional)

References 18 Referenced 173

{'key': '2024020215204184800_r1', 'volume': '358', 'year': '1995', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1995)
10.1063/1.103561 / Appl. Phys. Lett. (1990)
10.1007/BF00331535 / Appl. Phys. A (1991)
10.1021/j100108a019 / J. Phys. Chem. (1993)
10.1021/ja00072a025 / J. Am. Chem. Soc. (1993)
10.1063/1.105773 / Appl. Phys. Lett. (1991)
10.1143/JJAP.31.L365 / Jpn. J. Appl. Phys. (1992)
{'key': '2024020215204184800_r8', 'first-page': '3840', 'volume': '31', 'year': '1993', 'journal-title': 'Jpn. J. Appl. Phys.'} / Jpn. J. Appl. Phys. (1993)
10.1063/1.111766 / Appl. Phys. Lett. (1994)
{'key': '2024020215204184800_r10', 'first-page': '3023', 'volume': '12', 'year': '1994', 'journal-title': 'J. Vac. Sci. Technol. B'} / J. Vac. Sci. Technol. B (1994)
10.1063/1.106808 / Appl. Phys. Lett. (1992)
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{'key': '2024020215204184800_r13', 'first-page': '409', 'volume': '316', 'year': '1994', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1994)
{'key': '2024020215204184800_r14', 'first-page': '169', 'volume': '358', 'year': '1995', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1995)
{'key': '2024020215204184800_r15', 'first-page': '175', 'volume': '358', 'year': '1995', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1995)
{'key': '2024020215204184800_r16'}
10.1103/PhysRevB.51.1658 / Phys. Rev. B (1995)
10.1063/1.342945 / J. Appl. Phys. (1989)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:50 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11:36 a.m.)
Indexed	4 months ago (April 22, 2025, 2:21 p.m.)
Issued	29 years, 10 months ago (Oct. 1, 1995)
Published	29 years, 10 months ago (Oct. 1, 1995)
Published Print	29 years, 10 months ago (Oct. 1, 1995)

Funders 0

None

BibTeX

@article{Zhu_1995, title={Growth of Ge, Si, and SiGe nanocrystals in SiO2 matrices}, volume={78}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.359843}, DOI={10.1063/1.359843}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zhu, Jane G. and White, C.W. and Budai, J. D. and Withrow, S. P. and Chen, Y.}, year={1995}, month=oct, pages={4386–4389} }

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