DOI: 10.1063/1.3592834. Electronic structure of Pt based topological Heusler compounds with C1b structure and “zero band gap”

Electronic structure of Pt based topological Heusler compounds with C1b structure and “zero band gap”

10.1063/1.3592834

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Besides of their well-known wide range of properties it was recently shown that many of the heavy Heusler semiconductors with 1:1:1 composition and C1b structure exhibit a zero band gap behavior and are topological insulators induced by their inverted band structure. In the present study, the electronic structure of the Heusler compounds PtYSb and PtLaBi was investigated by bulk sensitive hard x-ray photoelectron spectroscopy. The measured valence band spectra are clearly resolved and in well agreement to the first-principles calculations of the electronic structure of the compounds. The experimental results give clear evidence for the zero band gap state.

Bibliography

Ouardi, S., Shekhar, C., Fecher, G. H., Kozina, X., Stryganyuk, G., Felser, C., Ueda, S., & Kobayashi, K. (2011). Electronic structure of Pt based topological Heusler compounds with C1b structure and âzero band gap.â Applied Physics Letters, 98(21).

Authors 8

Siham Ouardi (first)
Chandra Shekhar (additional)
Gerhard H. Fecher (additional)
Xeniya Kozina (additional)
Gregory Stryganyuk (additional)
Claudia Felser (additional)
Shigenori Ueda (additional)
Keisuke Kobayashi (additional)

References 22 Referenced 42

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10.1007/BF03038432 / Metall. Mater. Trans. B (1970)
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10.1002/anie.200900598 / Angew. Chem. (2009)
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10.1063/1.1814441 / Appl. Phys. Lett. (2004)
10.1063/1.2931089 / Appl. Phys. Lett. (2008)
10.1088/0953-8984/15/4/304 / J. Phys.: Condens. Matter (2003)
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Dates

Type	When
Created	14 years, 2 months ago (May 23, 2011, 7:09 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:12 a.m.)
Indexed	3 weeks, 2 days ago (July 30, 2025, 6:57 a.m.)
Issued	14 years, 3 months ago (May 23, 2011)
Published	14 years, 3 months ago (May 23, 2011)
Published Online	14 years, 3 months ago (May 23, 2011)
Published Print	14 years, 3 months ago (May 23, 2011)

Funders 1

Deutsche Forschungsgemeinschaft 10.13039/501100001659
Region: Europe
gov (National government)
Labels3
1. German Research Association
2. German Research Foundation
3. DFG

BibTeX

@article{Ouardi_2011, title={Electronic structure of Pt based topological Heusler compounds with C1b structure and “zero band gap”}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3592834}, DOI={10.1063/1.3592834}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ouardi, Siham and Shekhar, Chandra and Fecher, Gerhard H. and Kozina, Xeniya and Stryganyuk, Gregory and Felser, Claudia and Ueda, Shigenori and Kobayashi, Keisuke}, year={2011}, month=may }

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