DOI: 10.1063/1.359082. Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor

Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor

10.1063/1.359082

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

This paper studies the effects of gate voltage on heat generation and transport in a metal–semiconductor field effect transistor made of gallium arsenide (GaAs) with a gate length of 0.2 μm. Based on the interactions between electrons, optical phonons, and acoustic phonons in GaAs, a self-consistent model consisting of hydrodynamic equations for electrons and phonons is developed. Concurrent study of the electrical and thermal behavior of the device shows that under a source-to-drain bias at 3 V and zero gate bias, the maximum electron temperature rise in this device is higher than 1000 K whereas the lattice temperature rise is of the order of 10 K, thereby exhibiting nonequilibrium characteristics. As the gate voltage is decreased from 0 to −2 V the maximum electron temperature increases due to generation of higher electric fields whereas the maximum lattice temperature reduces due to lower power dissipation. The nonequilibrium hot-electron effect can reduce the drain current by 15% and must be included in the analysis. More importantly, it is found that the electron temperature rise is nearly independent of the thermal package conductance whereas the lattice temperature rise depends strongly on it. In addition, an increase of lattice temperature by 100 K can reduce the drain current by 25%.

Bibliography

Majumdar, A., Fushinobu, K., & Hijikata, K. (1995). Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor. Journal of Applied Physics, 77(12), 6686â6694.

Authors 3

A. Majumdar (first)
K. Fushinobu (additional)
K. Hijikata (additional)

References 24 Referenced 72

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10.1109/16.123465 / IEEE Trans Electron Devices (1992)
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10.1063/1.100290 / Appl. Phys. Lett. (1988)
10.1109/3.123 / IEEE J. Quantum Electron. (1988)
{'key': '2024020214554040700_r8', 'first-page': '46', 'year': '1990', 'journal-title': 'Physics Today'} / Physics Today (1990)
10.1103/PhysRevLett.65.760 / Phys. Rev. Lett. (1990)
10.1103/PhysRevLett.66.1757 / Phys. Rev. Lett. (1991)
10.1103/PhysRevLett.44.1505 / Phys. Rev. Lett. (1980)
{'key': '2024020214554040700_r12', 'first-page': '38', 'volume': 'ED-17', 'year': '1970', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1970)
10.1115/1.2822317 / ASME J. Heat Transfer (1995)
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10.1103/RevModPhys.61.605 / Rev. Mod. Phys. (1989)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 11:10 a.m.)
Indexed	1 year, 1 month ago (July 1, 2024, 9:55 a.m.)
Issued	30 years, 2 months ago (June 15, 1995)
Published	30 years, 2 months ago (June 15, 1995)
Published Print	30 years, 2 months ago (June 15, 1995)

Funders 0

None

BibTeX

@article{Majumdar_1995, title={Effect of gate voltage on hot-electron and hot phonon interaction and transport in a submicrometer transistor}, volume={77}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.359082}, DOI={10.1063/1.359082}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Majumdar, A. and Fushinobu, K. and Hijikata, K.}, year={1995}, month=jun, pages={6686–6694} }

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