DOI: 10.1063/1.359055. Ga2O3 films for electronic and optoelectronic applications

Ga2O3 films for electronic and optoelectronic applications

10.1063/1.359055

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Properties of Ga2O3 thin films deposited by electron-beam evaporation from a high-purity single-crystal Gd3Ga5O12 source are reported. As-deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≊100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to Al2O3/GaAs structures.

Bibliography

Passlack, M., Schubert, E. F., Hobson, W. S., Hong, M., Moriya, N., Chu, S. N. G., Konstadinidis, K., Mannaerts, J. P., Schnoes, M. L., & Zydzik, G. J. (1995). Ga2O3 films for electronic and optoelectronic applications. Journal of Applied Physics, 77(2), 686â693.

Authors 10

M. Passlack (first)
E. F. Schubert (additional)
W. S. Hobson (additional)
M. Hong (additional)
N. Moriya (additional)
S. N. G. Chu (additional)
K. Konstadinidis (additional)
J. P. Mannaerts (additional)
M. L. Schnoes (additional)
G. J. Zydzik (additional)

References 31 Referenced 402

{'key': '2024020214184020400_r1'}
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10 a.m.)
Indexed	4 days, 22 hours ago (Aug. 19, 2025, 6:39 a.m.)
Issued	30 years, 7 months ago (Jan. 15, 1995)
Published	30 years, 7 months ago (Jan. 15, 1995)
Published Print	30 years, 7 months ago (Jan. 15, 1995)

Funders 0

None

BibTeX

@article{Passlack_1995, title={Ga2O3 films for electronic and optoelectronic applications}, volume={77}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.359055}, DOI={10.1063/1.359055}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Passlack, M. and Schubert, E. F. and Hobson, W. S. and Hong, M. and Moriya, N. and Chu, S. N. G. and Konstadinidis, K. and Mannaerts, J. P. and Schnoes, M. L. and Zydzik, G. J.}, year={1995}, month=jan, pages={686–693} }

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