DOI: 10.1063/1.359018. Substrate bias effect on the random telegraph signal parameters in submicrometer silicon <i>p</i>–metal–oxide

Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors

10.1063/1.359018

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The effects of the substrate bias VBS on the parameters of random telegraph signals (RTSs) in submicrometer silicon p-channel metal–oxide–semiconductor transistors are analyzed. The fractional RTS amplitude increases slightly for more positive VBS, suggesting a close connection with the capture cross section of the corresponding near-interface oxide trap. A strong exponential dependence of the capture time constant on the drain current ID is observed, which can be explained by the transverse-field dependence of the hole capture cross section. The emission time constant on the other shows only a weak dependence on VBS, or ID. Finally, the corresponding low-frequency noise peaks at constant frequency f are studied in detail; excellent agreement is observed between the theoretical Lorentzian spectrum and the experimental peaks.

Bibliography

Simoen, E., & Claeys, C. (1995). Substrate bias effect on the random telegraph signal parameters in submicrometer silicon pâmetalâoxideâsemiconductor transistors. Journal of Applied Physics, 77(2), 910â914.

Authors 2

E. Simoen (first)
C. Claeys (additional)

References 19 Referenced 13

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 9:54 a.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 5:48 p.m.)
Issued	30 years, 7 months ago (Jan. 15, 1995)
Published	30 years, 7 months ago (Jan. 15, 1995)
Published Print	30 years, 7 months ago (Jan. 15, 1995)

Funders 0

None

BibTeX

@article{Simoen_1995, title={Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors}, volume={77}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.359018}, DOI={10.1063/1.359018}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Simoen, E. and Claeys, C.}, year={1995}, month=jan, pages={910–914} }

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