DOI: 10.1063/1.3589370. Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

10.1063/1.3589370

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Pulsed laser atom probe tomography (APT) of InxGa1−xN single quantum well (SQW) grown on semipolar (101¯1¯) GaN orientation estimates the interior atomic composition within the SQW at 6.5±0.7 at. % In, 46.2±0.7 at. % Ga, and 47.3±0.7 at. % N. The atom probe analysis is performed in both “top-down” and “cross-section” orientations. Self-consistent Schrödinger–Poisson simulation employing structural and compositional parameters obtained from APT results estimates the polarization field within the SQW at 720 kV/cm. A statistical method for the evaluation of indium homogeneity within the SQW is also considered.

Bibliography

Prosa, T. J., Clifton, P. H., Zhong, H., Tyagi, A., Shivaraman, R., DenBaars, S. P., Nakamura, S., & Speck, J. S. (2011). Atom probe analysis of interfacial abruptness and clustering within a single InxGa1âxN quantum well device on semipolar (101Â¯1Â¯) GaN substrate. Applied Physics Letters, 98(19).

Authors 8

T. J. Prosa (first)
P. H. Clifton (additional)
H. Zhong (additional)
A. Tyagi (additional)
R. Shivaraman (additional)
S. P. DenBaars (additional)
S. Nakamura (additional)
J. S. Speck (additional)

References 22 Referenced 54

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Dates

Type	When
Created	14 years, 3 months ago (May 12, 2011, 1:29 p.m.)
Deposited	2 years ago (Aug. 3, 2023, 3:19 a.m.)
Indexed	2 weeks, 1 day ago (Aug. 6, 2025, 8:51 a.m.)
Issued	14 years, 3 months ago (May 9, 2011)
Published	14 years, 3 months ago (May 9, 2011)
Published Online	14 years, 3 months ago (May 11, 2011)
Published Print	14 years, 3 months ago (May 9, 2011)

Funders 0

None

BibTeX

@article{Prosa_2011, title={Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3589370}, DOI={10.1063/1.3589370}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Prosa, T. J. and Clifton, P. H. and Zhong, H. and Tyagi, A. and Shivaraman, R. and DenBaars, S. P. and Nakamura, S. and Speck, J. S.}, year={2011}, month=may }

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