DOI: 10.1063/1.3589364. Band gap formation in graphene by <i>in-situ</i> doping

Band gap formation in graphene by in-situ doping

10.1063/1.3589364

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular beam epitaxy growth on SiC was achieved by using different carbon sources. Doping heterostructures were grown by stacking n-type material from a C60 source on p-type material from a graphite filament source. Activation energies for the resistivity and carrier concentration indicated band gaps up to 200 meV. A photoconductivity threshold was observed in the range of the electrical activation energies. Band gap formation is attributed to electric fields induced by spatially separated ionized dopants of opposite charge.

Bibliography

Park, J., Mitchel, W. C., Brown, G. J., Elhamri, S., Grazulis, L., Smith, H. E., Pacley, S. D., Boeckl, J. J., Eyink, K. G., Mou, S., Tomich, D. H., & Hoelscher, J. E. (2011). Band gap formation in graphene by in-situ doping. Applied Physics Letters, 98(20).

Authors 12

Jeongho Park (first)
W. C. Mitchel (additional)
Gail J. Brown (additional)
Said Elhamri (additional)
Lawrence Grazulis (additional)
Howard E. Smith (additional)
Shanee D. Pacley (additional)
John J. Boeckl (additional)
Kurt G. Eyink (additional)
Shin Mou (additional)
David H. Tomich (additional)
John E. Hoelscher (additional)

References 14 Referenced 11

10.1038/nature05180 / Nature (London) (2006)
10.1103/PhysRevLett.98.206805 / Phys. Rev. Lett. (2007)
10.1103/PhysRevLett.96.086805 / Phys. Rev. Lett. (2006)
10.1038/nature08105 / Nature (London) (2009)
10.1103/PhysRevLett.99.216802 / Phys. Rev. Lett. (2007)
10.1103/PhysRevLett.102.256405 / Phys. Rev. Lett. (2009)
10.1126/science.1130681 / Science (2006)
10.1002/adma.201000756 / Adv. Mater. (Weinheim, Ger.) (2010)
10.1103/PhysRevB.82.081407 / Phys. Rev. B (2010)
10.1038/nmat2082 / Nature Mater. (2008)
10.1021/nl803698b / Nano Lett. (2009)
{'first-page': '80', 'volume-title': 'Electronic Properties of Doped Semiconductors', 'year': '1984', 'key': '2023070217012130700_c12'} / Electronic Properties of Doped Semiconductors (1984)
10.1103/PhysRevB.74.165310 / Phys. Rev. B (2006)
10.1103/RevModPhys.81.109 / Rev. Mod. Phys. (2009)

Dates

Type	When
Created	14 years, 3 months ago (May 20, 2011, 7:39 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 1:01 p.m.)
Indexed	1 month ago (July 30, 2025, 6:56 a.m.)
Issued	14 years, 3 months ago (May 16, 2011)
Published	14 years, 3 months ago (May 16, 2011)
Published Online	14 years, 3 months ago (May 17, 2011)
Published Print	14 years, 3 months ago (May 16, 2011)

Funders 0

None

BibTeX

@article{Park_2011, title={Band gap formation in graphene by in-situ doping}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3589364}, DOI={10.1063/1.3589364}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Park, Jeongho and Mitchel, W. C. and Brown, Gail J. and Elhamri, Said and Grazulis, Lawrence and Smith, Howard E. and Pacley, Shanee D. and Boeckl, John J. and Eyink, Kurt G. and Mou, Shin and Tomich, David H. and Hoelscher, John E.}, year={2011}, month=may }

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