Abstract
Specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC were reported. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 500 °C and yielded values <5×10−6 Ω cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer.
References
6
Referenced
179
{'key': '2024020214184961300_r1'}
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:48 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 9:57 a.m.) |
Indexed | 2 weeks, 2 days ago (Aug. 12, 2025, 5:53 p.m.) |
Issued | 30 years, 6 months ago (Feb. 1, 1995) |
Published | 30 years, 6 months ago (Feb. 1, 1995) |
Published Print | 30 years, 6 months ago (Feb. 1, 1995) |
@article{Crofton_1995, title={High-temperature ohmic contact to n-type 6H-SiC using nickel}, volume={77}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.358936}, DOI={10.1063/1.358936}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Crofton, J. and McMullin, P. G. and Williams, J. R. and Bozack, M. J.}, year={1995}, month=feb, pages={1317–1319} }