DOI: 10.1063/1.358916. Current-voltage characteristics of strained piezoelectric structures

Current-voltage characteristics of strained piezoelectric structures

10.1063/1.358916

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Experimental and theoretical studies are presented of the current-voltage characteristics of symmetrically doped n-type GaN-AlN-GaN semiconductor-insulator-semiconductor (SIS) structures. The asymmetry caused by the strain-induced electric field leads to the depletion layer barrier in addition to the barrier presented by a thin insulating layer of AlN. It is shown that the tunnel current depends on the degree of the elastic strain relaxation which, in turn, is related to the AlN film thickness. This dependence provides quantitative information about the film relaxation. This characterization technique is compared with the capacitance-voltage characterization of the SIS structures. The data indicate that the low bound of the conduction-band offset for the AlN/GaN heterointerface is close to 1 eV.

Bibliography

Bykhovski, A., Gelmont, B., Shur, M., & Khan, A. (1995). Current-voltage characteristics of strained piezoelectric structures. Journal of Applied Physics, 77(4), 1616â1620.

Authors 4

A. Bykhovski (first)
B. Gelmont (additional)
M. Shur (additional)
A. Khan (additional)

References 15 Referenced 86

10.1063/1.94082 / Appl. Phys. Lett. (1983)
{'key': '2024020214214281100_r2'}
{'key': '2024020214214281100_r3', 'first-page': '53', 'volume': 'UFFC-41', 'year': '1994', 'journal-title': 'IEEE Trans. Ultrason. Ferroelectrics Frequency Control'} / IEEE Trans. Ultrason. Ferroelectrics Frequency Control (1994)
10.1063/1.355070 / J. Appl. Phys. (1993)
10.1063/1.110540 / Appl. Phys. Lett. (1993)
{'key': '2024020214214281100_r6', 'first-page': '691', 'volume': '137', 'year': '1994', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1994)
{'key': '2024020214214281100_r7'}
10.1016/0022-3697(68)90218-7 / J. Phys. Chem. Solids (1968)
{'key': '2024020214214281100_r9'}
10.1103/PhysRevLett.64.1777 / Phys. Rev. Lett. (1990)
10.1103/PhysRevB.45.6534 / Phys. Rev. B (1992)
{'key': '2024020214214281100_r12', 'first-page': '745', 'volume': '19', 'year': '1985', 'journal-title': 'Sov. Phys. Semicond.'} / Sov. Phys. Semicond. (1985)
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{'key': '2024020214214281100_r14'}
{'key': '2024020214214281100_r15'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:02 a.m.)
Indexed	4 months, 3 weeks ago (April 1, 2025, 7:42 a.m.)
Issued	30 years, 6 months ago (Feb. 15, 1995)
Published	30 years, 6 months ago (Feb. 15, 1995)
Published Print	30 years, 6 months ago (Feb. 15, 1995)

Funders 0

None

BibTeX

@article{Bykhovski_1995, title={Current-voltage characteristics of strained piezoelectric structures}, volume={77}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.358916}, DOI={10.1063/1.358916}, number={4}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bykhovski, A. and Gelmont, B. and Shur, M. and Khan, A.}, year={1995}, month=feb, pages={1616–1620} }

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