DOI: 10.1063/1.358644. Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures

Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures

10.1063/1.358644

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The performance of long-wavelength n+-on-p and p-on-n HgCdTe photodiodes is reexamined theoretically. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. The influence of junction position on the R0A product, photoelectrical gain, and noise for both types of HgCdTe photodiodes operated at 77 K, with 0.1 eV base material, is considered. Especially, the R0A product as a function of cutoff wavelength and temperatures is analyzed in detail for both type of structures. For assumed doping concentrations in the base region of homojunctions (Na=5×1015 cm−3 for the n+-on-p structure and Nd=5×1014 cm−3 for the p-on-n structure), the influence of a p-type cap layer on the effective R0A product is more serious for p-on-n structures in comparison with influence of an n+-type layer on the R0A product for n+-on-p junctions. Therefore, to suppress the deleterious influence of cap layers (especially in the case of p-on-n junctions), a wider band-gap cap layer is necessary. For a given cutoff wavelength, the theoretical values of the R0A product for p-on-n photodiodes in the temperature range below 77 K are a little greater than for n+-on-p photodiodes, which is due to lower doping. In the higher temperature range for very long-wavelength photodiodes, p-type base devices are more advantageous. Results of calculations are compared with experimental data reported by other authors.

Bibliography

Rogalski, A., & Ciupa, R. (1995). Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures. Journal of Applied Physics, 77(7), 3505â3512.

Authors 2

A. Rogalski (first)
R. Ciupa (additional)

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{'key': '2024020214374957500_r1'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:48 a.m.)
Deposited	1 year, 6 months ago (Feb. 2, 2024, 10:34 a.m.)
Indexed	4 months, 1 week ago (April 16, 2025, 2:13 a.m.)
Issued	30 years, 4 months ago (April 1, 1995)
Published	30 years, 4 months ago (April 1, 1995)
Published Print	30 years, 4 months ago (April 1, 1995)

Funders 0

None

BibTeX

@article{Rogalski_1995, title={Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures}, volume={77}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.358644}, DOI={10.1063/1.358644}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rogalski, A. and Ciupa, R.}, year={1995}, month=apr, pages={3505–3512} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        16
      ]
    ],
    "date-time": "2025-04-16T06:13:01Z",
    "timestamp": 1744783981011
  },
  "reference-count": 53,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1995,
        4,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The performance of long-wavelength n+-on-p and p-on-n HgCdTe photodiodes is reexamined theoretically. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. The influence of junction position on the R0A product, photoelectrical gain, and noise for both types of HgCdTe photodiodes operated at 77 K, with 0.1 eV base material, is considered. Especially, the R0A product as a function of cutoff wavelength and temperatures is analyzed in detail for both type of structures. For assumed doping concentrations in the base region of homojunctions (Na=5\u00d71015 cm\u22123 for the n+-on-p structure and Nd=5\u00d71014 cm\u22123 for the p-on-n structure), the influence of a p-type cap layer on the effective R0A product is more serious for p-on-n structures in comparison with influence of an n+-type layer on the R0A product for n+-on-p junctions. Therefore, to suppress the deleterious influence of cap layers (especially in the case of p-on-n junctions), a wider band-gap cap layer is necessary. For a given cutoff wavelength, the theoretical values of the R0A product for p-on-n photodiodes in the temperature range below 77 K are a little greater than for n+-on-p photodiodes, which is due to lower doping. In the higher temperature range for very long-wavelength photodiodes, p-type base devices are more advantageous. Results of calculations are compared with experimental data reported by other authors.</jats:p>",
  "DOI": "10.1063/1.358644",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:48:32Z",
    "timestamp": 1027691312000
  },
  "page": "3505-3512",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 21,
  "title": "Long-wavelength HgCdTe photodiodes: <i>n</i>+-on-<i>p</i> versus <i>p</i>-on-<i>n</i> structures",
  "prefix": "10.1063",
  "volume": "77",
  "author": [
    {
      "given": "A.",
      "family": "Rogalski",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Institute of Technical Physics, Military University of Technology, 01-489 Warsaw 49, Poland"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Ciupa",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute of Technical Physics, Military University of Technology, 01-489 Warsaw 49, Poland"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020214374957500_r1"
    },
    {
      "key": "2024020214374957500_r2",
      "first-page": "274",
      "volume": "ED-29",
      "year": "1982",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020214374957500_r3",
      "doi-asserted-by": "crossref",
      "first-page": "700",
      "DOI": "10.1016/0022-0248(90)90798-P",
      "volume": "86",
      "year": "1988",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020214374957500_r4",
      "doi-asserted-by": "crossref",
      "first-page": "723",
      "DOI": "10.1016/0022-0248(90)90799-Q",
      "volume": "86",
      "year": "1988",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020214374957500_r5",
      "doi-asserted-by": "crossref",
      "first-page": "139",
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      "volume": "28",
      "year": "1988",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020214374957500_r6",
      "doi-asserted-by": "crossref",
      "first-page": "C88",
      "DOI": "10.1088/0268-1242/6/12C/017",
      "volume": "6",
      "year": "1991",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020214374957500_r7",
      "doi-asserted-by": "crossref",
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    },
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    },
    {
      "key": "2024020214374957500_r9",
      "doi-asserted-by": "crossref",
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      "DOI": "10.1016/0079-6727(88)90001-8",
      "volume": "12",
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      "journal-title": "Prog. Quantum Electron."
    },
    {
      "key": "2024020214374957500_r10",
      "doi-asserted-by": "crossref",
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      "journal-title": "J. Appl. Phys."
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    {
      "key": "2024020214374957500_r11",
      "doi-asserted-by": "crossref",
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      "volume": "5",
      "year": "1990",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
      "key": "2024020214374957500_r12",
      "doi-asserted-by": "crossref",
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      "DOI": "10.1063/1.348741",
      "volume": "69",
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      "journal-title": "J. Appl. Phys."
    },
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      "doi-asserted-by": "crossref",
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      "volume": "9",
      "year": "1991",
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    },
    {
      "key": "2024020214374957500_r14",
      "doi-asserted-by": "crossref",
      "first-page": "1740",
      "DOI": "10.1116/1.585409",
      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024020214374957500_r15",
      "doi-asserted-by": "crossref",
      "first-page": "463",
      "DOI": "10.1016/0020-0891(92)90061-W",
      "volume": "33",
      "year": "1992",
      "journal-title": "Infrared Phys."
    },
    {
      "key": "2024020214374957500_r16",
      "doi-asserted-by": "crossref",
      "first-page": "109",
      "DOI": "10.1117/12.138616",
      "volume": "1735",
      "year": "1992",
      "journal-title": "Proc. SPIE"
    },
    {
      "key": "2024020214374957500_r17",
      "doi-asserted-by": "crossref",
      "first-page": "976",
      "DOI": "10.1063/1.108538",
      "volume": "62",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020214374957500_r18",
      "doi-asserted-by": "crossref",
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      "DOI": "10.1007/BF02817494",
      "volume": "22",
      "year": "1993",
      "journal-title": "J. Electron. Mater."
    },
    {
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      "doi-asserted-by": "crossref",
      "first-page": "788",
      "DOI": "10.1088/0268-1242/8/6S/003",
      "volume": "8",
      "year": "1993",
      "journal-title": "Semicond. Sci. Technol."
    },
    {
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      "doi-asserted-by": "crossref",
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      "volume": "33",
      "year": "1994",
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    },
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    },
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      "first-page": "560",
      "DOI": "10.1002/j.1538-7305.1950.tb03653.x",
      "volume": "29",
      "year": "1950",
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      "volume": "26",
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      "volume": "33",
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    },
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      "doi-asserted-by": "crossref",
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      "volume": "31",
      "year": "1991",
      "journal-title": "Infrared Phys."
    },
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      "doi-asserted-by": "crossref",
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      "volume": "86",
      "year": "1988",
      "journal-title": "J. Cryst. Growth"
    },
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      "first-page": "48",
      "volume": "ED-27",
      "year": "1980",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020214374957500_r42"
    },
    {
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      "doi-asserted-by": "crossref",
      "first-page": "9130",
      "DOI": "10.1063/1.330425",
      "volume": "53",
      "year": "1982",
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    },
    {
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      "doi-asserted-by": "crossref",
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      "volume": "6",
      "year": "1988",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020214374957500_r45",
      "doi-asserted-by": "crossref",
      "first-page": "2655",
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      "volume": "6",
      "year": "1988",
      "journal-title": "J. Vac. Sci. Technol. A"
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    {
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      "doi-asserted-by": "crossref",
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      "volume": "7",
      "year": "1989",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
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      "doi-asserted-by": "crossref",
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      "volume": "9",
      "year": "1991",
      "journal-title": "J. Vac. Sci. Technol. B"
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      "doi-asserted-by": "crossref",
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    },
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    },
    {
      "key": "2024020214374957500_r51"
    },
    {
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      "doi-asserted-by": "crossref",
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      "DOI": "10.1016/0022-0248(91)90528-D",
      "volume": "107",
      "year": "1991",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020214374957500_r53",
      "doi-asserted-by": "crossref",
      "first-page": "1649",
      "DOI": "10.1117/12.56001",
      "volume": "30",
      "year": "1991",
      "journal-title": "Opt. Eng."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/77/7/3505/18675259/3505_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/77/7/3505/18675259/3505_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        2
      ]
    ],
    "date-time": "2024-02-02T15:34:54Z",
    "timestamp": 1706888094000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/77/7/3505/291765/Long-wavelength-HgCdTe-photodiodes-n-on-p-versus-p"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1995,
        4,
        1
      ]
    ]
  },
  "references-count": 53,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          1995,
          4,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.358644",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1995,
        4,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1995,
        4,
        1
      ]
    ]
  }
}