DOI: 10.1063/1.3584137. Terahertz response of field-effect transistors in saturation regime

Terahertz response of field-effect transistors in saturation regime

10.1063/1.3584137

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very high values up to 170 V/W. We also develop a phenomenological theory valid both in the Ohmic and in the saturation regimes.

Bibliography

Elkhatib, T. A., Kachorovskii, V. Yu., Stillman, W. J., Rumyantsev, S., Zhang, X.-C., & Shur, M. S. (2011). Terahertz response of field-effect transistors in saturation regime. Applied Physics Letters, 98(24).

Authors 6

T. A. Elkhatib (first)
V. Yu. Kachorovskii (additional)
W. J. Stillman (additional)
S. Rumyantsev (additional)
X.-C. Zhang (additional)
M. S. Shur (additional)

References 25 Referenced 37

10.1103/PhysRevLett.71.2465 / Phys. Rev. Lett. (1993)
10.1109/16.485650 / IEEE Trans. Electron Devices (1996)
10.1063/1.1367289 / Appl. Phys. Lett. (2001)
10.1063/1.1468257 / J. Appl. Phys. (2002)
10.1063/1.1525851 / Appl. Phys. Lett. (2002)
10.1063/1.1473685 / Appl. Phys. Lett. (2002)
10.1063/1.1792377 / Appl. Phys. Lett. (2004)
10.1063/1.1775034 / Appl. Phys. Lett. (2004)
10.1063/1.1638625 / Appl. Phys. Lett. (2004)
10.1063/1.2005394 / Appl. Phys. Lett. (2005)
10.1063/1.2392999 / Appl. Phys. Lett. (2006)
10.1063/1.2358816 / Appl. Phys. Lett. (2006)
10.1063/1.2410215 / Appl. Phys. Lett. (2006)
10.1103/PhysRevB.73.125328 / Phys. Rev. B (2006)
10.1166/jno.2007.301 / J. Nanoelectron. Optoelectron. (2007)
{'first-page': '443', 'volume-title': 'Proceedings of the 6th IEEE Sensors Conference', 'year': '2007', 'key': '2023070504012928800_c16'} / Proceedings of the 6th IEEE Sensors Conference (2007)
10.1049/el:20073475 / Electron. Lett. (2007)
10.1063/1.3140611 / J. Appl. Phys. (2009)
10.1016/j.sse.2007.08.002 / Solid-State Electron. (2008)
10.1063/1.3207886 / Appl. Phys. Lett. (2009)
10.1016/j.sse.2009.04.004 / Solid-State Electron. (2009)
{'year': '2009', 'key': '2023070504012928800_c22', 'first-page': '263'} (2009)
{'first-page': '1988', 'volume-title': 'Proceedings of the Eighth IEEE Sensors Conference', 'year': '2009', 'key': '2023070504012928800_c23'} / Proceedings of the Eighth IEEE Sensors Conference (2009)
10.1109/TMTT.2009.2037872 / IEEE Trans. Microwave Theory Tech. (2010)
{'volume-title': 'Introduction to Device Modeling and Circuit Simulation', 'year': '1998', 'key': '2023070504012928800_c25'} / Introduction to Device Modeling and Circuit Simulation (1998)

Dates

Type	When
Created	14 years, 2 months ago (June 17, 2011, 1:59 p.m.)
Deposited	2 years, 1 month ago (July 5, 2023, 2:31 p.m.)
Indexed	1 month ago (July 30, 2025, 6:56 a.m.)
Issued	14 years, 2 months ago (June 13, 2011)
Published	14 years, 2 months ago (June 13, 2011)
Published Online	14 years, 2 months ago (June 15, 2011)
Published Print	14 years, 2 months ago (June 13, 2011)

Funders 3

Russian Academy of Sciences 10.13039/501100002674
Region: Europe
gov (Universities (academic only))
Labels4
1. Российская Академия Наук
2. Russian Federation, Russian Academy of Sciences
3. RAS
4. РАН
Russian Foundation for Basic Research
National Science Foundation 10.13039/100000001
Region: Americas
gov (National government)
Labels4
1. U.S. National Science Foundation
2. NSF
3. US NSF
4. USA NSF

BibTeX

@article{Elkhatib_2011, title={Terahertz response of field-effect transistors in saturation regime}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3584137}, DOI={10.1063/1.3584137}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Elkhatib, T. A. and Kachorovskii, V. Yu. and Stillman, W. J. and Rumyantsev, S. and Zhang, X.-C. and Shur, M. S.}, year={2011}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:56:57Z",
    "timestamp": 1753873017807,
    "version": "3.41.2"
  },
  "reference-count": 25,
  "publisher": "AIP Publishing",
  "issue": "24",
  "funder": [
    {
      "DOI": "10.13039/501100002674",
      "name": "Russian Academy of Sciences",
      "doi-asserted-by": "crossref",
      "id": [
        {
          "id": "10.13039/501100002674",
          "id-type": "DOI",
          "asserted-by": "crossref"
        }
      ]
    },
    {
      "name": "Russian Foundation for Basic Research"
    },
    {
      "DOI": "10.13039/100000001",
      "name": "National Science Foundation",
      "doi-asserted-by": "publisher",
      "id": [
        {
          "id": "10.13039/100000001",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2011,
        6,
        13
      ]
    ]
  },
  "abstract": "<jats:p>We report on the broadband terahertz response of InGaAs/GaAs high electron mobility transistors operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain-bias current) and might reach very high values up to 170 V/W. We also develop a phenomenological theory valid both in the Ohmic and in the saturation regimes.</jats:p>",
  "DOI": "10.1063/1.3584137",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        6,
        17
      ]
    ],
    "date-time": "2011-06-17T17:59:40Z",
    "timestamp": 1308333580000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 37,
  "title": "Terahertz response of field-effect transistors in saturation regime",
  "prefix": "10.1063",
  "volume": "98",
  "author": [
    {
      "given": "T. A.",
      "family": "Elkhatib",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Rensselaer Polytechnic Institute 1 , 110, 8th Street, Troy, New York 12180, USA"
        }
      ]
    },
    {
      "given": "V. Yu.",
      "family": "Kachorovskii",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "A.F. Ioffe Physical Technical Institute 2 , 26 Polytechnicheskaya Street, St. Petersburg 194021, Russia"
        }
      ]
    },
    {
      "given": "W. J.",
      "family": "Stillman",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Rensselaer Polytechnic Institute 1 , 110, 8th Street, Troy, New York 12180, USA"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Rumyantsev",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Rensselaer Polytechnic Institute 1 , 110, 8th Street, Troy, New York 12180, USA"
        },
        {
          "name": "A.F. Ioffe Physical Technical Institute 2 , 26 Polytechnicheskaya Street, St. Petersburg 194021, Russia"
        }
      ]
    },
    {
      "given": "X.-C.",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Rensselaer Polytechnic Institute 1 , 110, 8th Street, Troy, New York 12180, USA"
        }
      ]
    },
    {
      "given": "M. S.",
      "family": "Shur",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Rensselaer Polytechnic Institute 1 , 110, 8th Street, Troy, New York 12180, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2011,
        6,
        15
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070504012928800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "2465",
      "DOI": "10.1103/PhysRevLett.71.2465",
      "volume": "71",
      "year": "1993",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023070504012928800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "380",
      "DOI": "10.1109/16.485650",
      "volume": "43",
      "year": "1996",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023070504012928800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "2587",
      "DOI": "10.1063/1.1367289",
      "volume": "78",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "9346",
      "DOI": "10.1063/1.1468257",
      "volume": "91",
      "year": "2002",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070504012928800_c5",
      "doi-asserted-by": "publisher",
      "first-page": "4637",
      "DOI": "10.1063/1.1525851",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "3433",
      "DOI": "10.1063/1.1473685",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "2119",
      "DOI": "10.1063/1.1792377",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "675",
      "DOI": "10.1063/1.1775034",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "70",
      "DOI": "10.1063/1.1638625",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "052107",
      "DOI": "10.1063/1.2005394",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "222109",
      "DOI": "10.1063/1.2392999",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "131926",
      "DOI": "10.1063/1.2358816",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "253511",
      "DOI": "10.1063/1.2410215",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c14",
      "doi-asserted-by": "publisher",
      "first-page": "125328",
      "DOI": "10.1103/PhysRevB.73.125328",
      "volume": "73",
      "year": "2006",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070504012928800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "209",
      "DOI": "10.1166/jno.2007.301",
      "volume": "2",
      "year": "2007",
      "journal-title": "J. Nanoelectron. Optoelectron."
    },
    {
      "first-page": "443",
      "volume-title": "Proceedings of the 6th IEEE Sensors Conference",
      "year": "2007",
      "key": "2023070504012928800_c16"
    },
    {
      "key": "2023070504012928800_c17",
      "doi-asserted-by": "publisher",
      "first-page": "422",
      "DOI": "10.1049/el:20073475",
      "volume": "43",
      "year": "2007",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2023070504012928800_c18",
      "doi-asserted-by": "publisher",
      "first-page": "114511",
      "DOI": "10.1063/1.3140611",
      "volume": "105",
      "year": "2009",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070504012928800_c19",
      "doi-asserted-by": "publisher",
      "first-page": "182",
      "DOI": "10.1016/j.sse.2007.08.002",
      "volume": "52",
      "year": "2008",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2023070504012928800_c20",
      "doi-asserted-by": "publisher",
      "first-page": "072106",
      "DOI": "10.1063/1.3207886",
      "volume": "95",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070504012928800_c21",
      "doi-asserted-by": "publisher",
      "first-page": "571",
      "DOI": "10.1016/j.sse.2009.04.004",
      "volume": "53",
      "year": "2009",
      "journal-title": "Solid-State Electron."
    },
    {
      "year": "2009",
      "key": "2023070504012928800_c22",
      "first-page": "263"
    },
    {
      "first-page": "1988",
      "volume-title": "Proceedings of the Eighth IEEE Sensors Conference",
      "year": "2009",
      "key": "2023070504012928800_c23"
    },
    {
      "key": "2023070504012928800_c24",
      "doi-asserted-by": "publisher",
      "first-page": "331",
      "DOI": "10.1109/TMTT.2009.2037872",
      "volume": "58",
      "year": "2010",
      "journal-title": "IEEE Trans. Microwave Theory Tech."
    },
    {
      "volume-title": "Introduction to Device Modeling and Circuit Simulation",
      "year": "1998",
      "key": "2023070504012928800_c25"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3584137/9391796/243505_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3584137/9391796/243505_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        5
      ]
    ],
    "date-time": "2023-07-05T18:31:33Z",
    "timestamp": 1688581893000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/98/24/243505/373203/Terahertz-response-of-field-effect-transistors-in"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        6,
        13
      ]
    ]
  },
  "references-count": 25,
  "journal-issue": {
    "issue": "24",
    "published-print": {
      "date-parts": [
        [
          2011,
          6,
          13
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3584137",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2011,
        6,
        13
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2011,
        6,
        13
      ]
    ]
  },
  "article-number": "243505"
}