Abstract
The electronic and structural properties of the oxygen vacancy (VO) in cubic BaTiO3 are studied using first-principles calculations based on a hybrid Hartree–Fock density functional approach. Our calculations identify the double shallow donor behavior of VO, indicating its contribution to the n-type conductivity. In addition, a metastable configuration is found, which shows an off-symmetric atomic structure around VO in conjunction with deep localized electronic states in the band gap. Based on the identified characteristics of VO, the previous experimental and theoretical findings are explained.
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Dates
Type | When |
---|---|
Created | 14 years, 3 months ago (April 27, 2011, 6:55 p.m.) |
Deposited | 2 years ago (July 31, 2023, 10:54 p.m.) |
Indexed | 2 days, 14 hours ago (Aug. 23, 2025, 1:06 a.m.) |
Issued | 14 years, 4 months ago (April 25, 2011) |
Published | 14 years, 4 months ago (April 25, 2011) |
Published Online | 14 years, 3 months ago (April 26, 2011) |
Published Print | 14 years, 4 months ago (April 25, 2011) |
@article{Choi_2011, title={Electronic and structural properties of the oxygen vacancy in BaTiO3}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3583460}, DOI={10.1063/1.3583460}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Minseok and Oba, Fumiyasu and Tanaka, Isao}, year={2011}, month=apr }