Abstract
NiFe/oxide/Co junctions were fabricated by magnetron sputtering for studies of polarized electron transport across the insulating barrier. Al2O3, Al-Al2O3, and MgO insulating barriers were prepared with junction resistances from 0.5 to 116 Ω. The I-V characteristics at room temperature are linear. For low barrier resistance, the magnetoresistance of the structure is dominated by the anisotropic magnetoresistance of the ferromagnetic electrodes. For the higher barrier resistances, a different magnetoresistance effect is observed, which is tentatively related to tunneling or spin-valve effects across the insulating junction.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:33 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 2, 2024, 9:32 a.m.) |
Indexed | 2 months ago (June 26, 2025, 6:45 a.m.) |
Issued | 30 years, 9 months ago (Nov. 15, 1994) |
Published | 30 years, 9 months ago (Nov. 15, 1994) |
Published Print | 30 years, 9 months ago (Nov. 15, 1994) |
@article{Plaskett_1994, title={Magnetoresistance and magnetic properties of NiFe/oxide/Co junctions prepared by magnetron sputtering}, volume={76}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.358319}, DOI={10.1063/1.358319}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Plaskett, T. S. and Freitas, P. P. and Barradas, N. P. and da Silva, M. F. and Soares, J. C.}, year={1994}, month=nov, pages={6104–6106} }