DOI: 10.1063/1.3581032. Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

10.1063/1.3581032

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman technique is used in a steady state. Good agreement is found between the techniques. The thermal conductivity of the diamond is found to be 2200 W/m K, and the thermal boundary resistance to the III-N epi-structure is &lt; 1 × 10−8 m2 K/W. The excellent cooling efficiency of the diamond is manifested by the fast saturation of the temperature at 1 μs and by a record low normalized thermal resistance of 3.5 K mm/W.

Bibliography

Kuzmik, J., Bychikhin, S., Pogany, D., Pichonat, E., Lancry, O., GaquiÃ¨re, C., Tsiakatouras, G., Deligeorgis, G., & Georgakilas, A. (2011). Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond. Journal of Applied Physics, 109(8).

Authors 9

J. Kuzmik (first)
S. Bychikhin (additional)
D. Pogany (additional)
E. Pichonat (additional)
O. Lancry (additional)
C. Gaquière (additional)
G. Tsiakatouras (additional)
G. Deligeorgis (additional)
A. Georgakilas (additional)

References 11 Referenced 32

10.1063/1.2435799 / J. Appl. Phys. (2007)
10.1063/1.3242349 / Appl. Phys. Lett. (2009)
10.1109/LED.2010.2077730 / IEEE Electron Dev. Lett. (2010)
10.1109/TED.2007.908874 / IEEE Trans. Electron Devices (2007)
10.1016/S0925-9635(00)00515-X / Diamond Relat. Mater. (2001)
10.1049/el.2009.1122 / Electron. Lett. (2009)
10.1049/el.2010.2937 / Electron. Lett. (2010)
10.1109/TED.2005.852172 / IEEE Trans. Electron. Devices (2005)
10.1103/PhysRevB.62.16578 / Phys. Rev. B (2000)
10.1016/j.sse.2007.04.001 / Solid-State Electron. (2007)
10.1109/TED.2007.913005 / IEEE Trans. Electron. Devices (2008)

Dates

Type	When
Created	14 years, 3 months ago (April 27, 2011, 6:55 p.m.)
Deposited	2 years ago (Aug. 1, 2023, 9:31 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:56 a.m.)
Issued	14 years, 4 months ago (April 15, 2011)
Published	14 years, 4 months ago (April 15, 2011)
Published Online	14 years, 3 months ago (April 27, 2011)
Published Print	14 years, 4 months ago (April 15, 2011)

Funders 0

None

BibTeX

@article{Kuzmik_2011, title={Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond}, volume={109}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3581032}, DOI={10.1063/1.3581032}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kuzmik, J. and Bychikhin, S. and Pogany, D. and Pichonat, E. and Lancry, O. and Gaquière, C. and Tsiakatouras, G. and Deligeorgis, G. and Georgakilas, A.}, year={2011}, month=apr }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:56:42Z",
    "timestamp": 1753873002197,
    "version": "3.41.2"
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "8",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2011,
        4,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman technique is used in a steady state. Good agreement is found between the techniques. The thermal conductivity of the diamond is found to be 2200 W/m K, and the thermal boundary resistance to the III-N epi-structure is\u2009&amp;lt;\u20091\u2009\u00d7\u200910\u22128 m2 K/W. The excellent cooling efficiency of the diamond is manifested by the fast saturation of the temperature at 1 \u03bcs and by a record low normalized thermal resistance of 3.5 K mm/W.</jats:p>",
  "DOI": "10.1063/1.3581032",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        4,
        27
      ]
    ],
    "date-time": "2011-04-27T22:55:31Z",
    "timestamp": 1303944931000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 32,
  "title": "Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond",
  "prefix": "10.1063",
  "volume": "109",
  "author": [
    {
      "given": "J.",
      "family": "Kuzmik",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Institute for Solid State Electronics Vienna University of Technology 1 , Floragasse 7, A-1040 Vienna, Austria, and Institute of Electrical Engineering Slovak Academy of Sciences, Dubravska cesta 9, 841 04 Bratislava, Slovakia"
        }
      ]
    },
    {
      "given": "S.",
      "family": "Bychikhin",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute for Solid State Electronics Vienna University of Technology 2 , Floragasse 7, A-1040 Vienna, Austria"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Pogany",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute for Solid State Electronics Vienna University of Technology 2 , Floragasse 7, A-1040 Vienna, Austria"
        }
      ]
    },
    {
      "given": "E.",
      "family": "Pichonat",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e9 des Sciences et Technologies de Lille 3 LASIR-UMR 8516, , 59655 Villeneuve d\u2019Ascq Cedex, France"
        }
      ]
    },
    {
      "given": "O.",
      "family": "Lancry",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e9 des Sciences et Technologies de Lille 3 LASIR-UMR 8516, , 59655 Villeneuve d\u2019Ascq Cedex, France"
        }
      ]
    },
    {
      "given": "C.",
      "family": "Gaqui\u00e8re",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universit\u00e9 des Sciences et Technologies de Lille 4 IEMN, , 59655 Villeneuve d\u2019Ascq Cedex, France"
        }
      ]
    },
    {
      "given": "G.",
      "family": "Tsiakatouras",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Crete 5 , P.O. Box 2208, 71003 Heraklion-Crete, Greece and IESL-FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece"
        }
      ]
    },
    {
      "given": "G.",
      "family": "Deligeorgis",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Crete 5 , P.O. Box 2208, 71003 Heraklion-Crete, Greece and IESL-FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece"
        }
      ]
    },
    {
      "given": "A.",
      "family": "Georgakilas",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Crete 5 , P.O. Box 2208, 71003 Heraklion-Crete, Greece and IESL-FORTH, P.O. Box 1527, 71110 Heraklion-Crete, Greece"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2011,
        4,
        27
      ]
    ]
  },
  "reference": [
    {
      "key": "2023080201311176500_c1",
      "doi-asserted-by": "publisher",
      "first-page": "054508",
      "DOI": "10.1063/1.2435799",
      "volume": "101",
      "year": "2007",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080201311176500_c2",
      "doi-asserted-by": "publisher",
      "first-page": "141904",
      "DOI": "10.1063/1.3242349",
      "volume": "95",
      "year": "2009",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080201311176500_c3",
      "doi-asserted-by": "crossref",
      "first-page": "1395",
      "DOI": "10.1109/LED.2010.2077730",
      "volume": "31",
      "year": "2010",
      "journal-title": "IEEE Electron Dev. Lett."
    },
    {
      "key": "2023080201311176500_c4",
      "doi-asserted-by": "publisher",
      "first-page": "3152",
      "DOI": "10.1109/TED.2007.908874",
      "volume": "54",
      "year": "2007",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023080201311176500_c5",
      "doi-asserted-by": "publisher",
      "first-page": "731",
      "DOI": "10.1016/S0925-9635(00)00515-X",
      "volume": "10",
      "year": "2001",
      "journal-title": "Diamond Relat. Mater."
    },
    {
      "key": "2023080201311176500_c6",
      "doi-asserted-by": "publisher",
      "first-page": "758",
      "DOI": "10.1049/el.2009.1122",
      "volume": "45",
      "year": "2009",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2023080201311176500_c7",
      "doi-asserted-by": "publisher",
      "first-page": "299",
      "DOI": "10.1049/el.2010.2937",
      "volume": "46",
      "year": "2010",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2023080201311176500_c8",
      "doi-asserted-by": "publisher",
      "first-page": "1698",
      "DOI": "10.1109/TED.2005.852172",
      "volume": "52",
      "year": "2005",
      "journal-title": "IEEE Trans. Electron. Devices"
    },
    {
      "issue": "16",
      "key": "2023080201311176500_c9",
      "doi-asserted-by": "publisher",
      "first-page": "578",
      "DOI": "10.1103/PhysRevB.62.16578",
      "volume": "62",
      "year": "2000",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023080201311176500_c10",
      "doi-asserted-by": "publisher",
      "first-page": "969",
      "DOI": "10.1016/j.sse.2007.04.001",
      "volume": "51",
      "year": "2007",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2023080201311176500_c11",
      "doi-asserted-by": "publisher",
      "first-page": "478",
      "DOI": "10.1109/TED.2007.913005",
      "volume": "55",
      "year": "2008",
      "journal-title": "IEEE Trans. Electron. Devices"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3581032/14710729/086106_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3581032/14710729/086106_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        8,
        2
      ]
    ],
    "date-time": "2023-08-02T01:31:21Z",
    "timestamp": 1690939881000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/109/8/086106/932560/Thermal-characterization-of-MBE-grown-GaN-AlGaN"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        4,
        15
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "8",
    "published-print": {
      "date-parts": [
        [
          2011,
          4,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3581032",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2011,
        4,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2011,
        4,
        15
      ]
    ]
  },
  "article-number": "086106"
}