DOI: 10.1063/1.357728. Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism

Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism

10.1063/1.357728

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

With rapid solidification following pulsed laser melting, we have measured the dependence on interface orientation of the amount of solute trapping of several group III, IV, and V elements (As, Ga, Ge, In, Sb, Sn) in Si. The aperiodic stepwise growth model of Goldman and Aziz accurately fits both the velocity and orientation dependence of solute trapping of all of these solutes except Ge. The success of the model implies a ledge structure for the crystal/melt interface and a step-flow mechanism for growth from the melt. In addition, we have observed an empirical inverse correlation between the two free parameters (‘‘diffusive speeds’’) in this model and the equilibrium solute partition coefficient of a system. This correlation may be used to estimate values of these free parameters for other systems in which solute trapping has not or cannot be measured. The possible microscopic origin of such a correlation is discussed.

Bibliography

Reitano, R., Smith, P. M., & Aziz, M. J. (1994). Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism. Journal of Applied Physics, 76(3), 1518â1529.

Authors 3

Riccardo Reitano (first)
Patrick M. Smith (additional)
Michael J. Aziz (additional)

References 33 Referenced 95

10.1063/1.327334 / J. Appl. Phys. (1980)
10.1016/0001-6160(69)90116-3 / Acta Metall. (1969)
10.1063/1.92057 / Appl. Phys. Lett. (1980)
{'key': '2024020213203521800_r4'}
10.1103/PhysRevLett.56.2489 / Phys. Rev. Lett. (1986)
{'key': '2024020213203521800_r6'}
{'key': '2024020213203521800_r7'}
10.1063/1.329867 / J. Appl. Phys. (1982)
{'key': '2024020213203521800_r9'}
{'key': '2024020213203521800_r10'}
10.1063/1.342586 / J. Appl. Phys. (1989)
{'key': '2024020213203521800_r12'}
{'key': '2024020213203521800_r13', 'first-page': '153', 'volume': '35', 'year': '1985', 'journal-title': 'Mater. Res. Soc. Proc.'} / Mater. Res. Soc. Proc. (1985)
10.1016/0001-6160(88)90333-1 / Acta Metall. (1988)
{'key': '2024020213203521800_r15'}
{'key': '2024020213203521800_r16', 'first-page': '5241', 'volume': '2', 'year': '1987', 'journal-title': 'J. Mater. Res.'} / J. Mater. Res. (1987)
10.1103/PhysRevLett.56.2489 / Phys. Rev. Lett. (1986)
10.1063/1.92136 / Appl. Phys. Lett. (1981)
{'key': '2024020213203521800_r19', 'first-page': '249', 'volume': '13', 'year': '1983', 'journal-title': 'Mater. Res. Soc. Proc.'} / Mater. Res. Soc. Proc. (1983)
10.1557/JMR.1986.0144 / J. Mater. Res. (1986)
10.1103/PhysRevLett.57.2675 / Phys. Rev. Lett. (1986)
10.1063/1.465281 / J. Chem. Phys. (1993)
{'key': '2024020213203521800_r23', 'first-page': '487', 'volume': '57', 'year': '1987', 'journal-title': 'Mater. Res. Soc. Proc.'} / Mater. Res. Soc. Proc. (1987)
{'key': '2024020213203521800_r24'}
10.1063/1.91856 / Appl. Phys. Lett. (1980)
{'key': '2024020213203521800_r26'}
10.1143/JJAP.2.212 / Jpn. J. Appl. Phys. (1963)
10.1016/0022-0248(91)90164-Z / J. Cryst. Growth (1991)
{'key': '2024020213203521800_r29'}
10.1063/1.91812 / Appl. Phys. Lett. (1980)
{'key': '2024020213203521800_r31'}
{'key': '2024020213203521800_r32', 'first-page': '135', 'volume': '35', 'year': '1985', 'journal-title': 'Mater. Res. Soc. Proc.'} / Mater. Res. Soc. Proc. (1985)
{'key': '2024020213203521800_r33'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:47 a.m.)
Deposited	1 year, 7 months ago (Feb. 2, 2024, 9 a.m.)
Indexed	1 day, 5 hours ago (Sept. 3, 2025, 6:10 a.m.)
Issued	31 years, 1 month ago (Aug. 1, 1994)
Published	31 years, 1 month ago (Aug. 1, 1994)
Published Print	31 years, 1 month ago (Aug. 1, 1994)

Funders 0

None

BibTeX

@article{Reitano_1994, title={Solute trapping of group III, IV, and V elements in silicon by an aperiodic stepwise growth mechanism}, volume={76}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.357728}, DOI={10.1063/1.357728}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Reitano, Riccardo and Smith, Patrick M. and Aziz, Michael J.}, year={1994}, month=aug, pages={1518–1529} }

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