Abstract
The current method of growing large-area graphene on polycrystalline Cu surfaces (foils or thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire [α-Al2O3(0001)] substrates for transfer to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer.
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Dates
Type | When |
---|---|
Created | 14 years, 5 months ago (March 18, 2011, 9:05 a.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 6:17 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:56 a.m.) |
Issued | 14 years, 5 months ago (March 14, 2011) |
Published | 14 years, 5 months ago (March 14, 2011) |
Published Online | 14 years, 5 months ago (March 17, 2011) |
Published Print | 14 years, 5 months ago (March 14, 2011) |
Funders
1
National Science Foundation
10.13039/100000001
Region: Americas
gov (National government)
Labels
4
- U.S. National Science Foundation
- NSF
- US NSF
- USA NSF
Awards
2
- 0820414
- 0925529
@article{Reddy_2011, title={High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire}, volume={98}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3569143}, DOI={10.1063/1.3569143}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reddy, Kongara M. and Gledhill, Andrew D. and Chen, Chun-Hu and Drexler, Julie M. and Padture, Nitin P.}, year={2011}, month=mar }